Low On Resistance N Channel MOSFET BORN 2SK3018 Suitable for Switching and Amplification Applications
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@4V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
13pF
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
The 2SK3018 is an N-Channel MOSFET designed for various electronic applications. It features a drain-source voltage of 30V, a continuous drain current of 0.1A, and low on-state resistance. Key electrical characteristics include a gate threshold voltage ranging from 0.8V to 1.5V and a typical forward transconductance of 20mS. This MOSFET is suitable for applications requiring efficient switching and signal amplification, with typical output characteristics and transfer characteristics detailed in the provided documentation.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Model: 2SK3018
- Type: N-Channel MOSFET
- Package: SOT-23
- Marking: KN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Ta = 25C) | 100 | mA | ||
| Pulsed Drain Current | IDM | (Note.1) | 400 | mA | ||
| Power Dissipation | PD | (Ta = 25C) | 200 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 1 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=3V , ID=0.1mA | 0.8 | 1.5 | V | |
| Forward Transconductance | gFS | VDS=3V, ID=10mA | 20 | mS | ||
| Input Capacitance | Ciss | VGS=0V, VDS=5V, f=1MHz | 13 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=5V, f=1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=5V, f=1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 15 | ns | ||
| Turn-On Rise Time | tr | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 80 | ns | ||
| Turn-Off Fall Time | tf | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 80 | ns | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4V, ID=10mA | 0.05 | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=2.5V, ID=1mA | 0.1 | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4V, ID=100mA | 0.15 |
2410010203_BORN-2SK3018_C6165148.pdf
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