Complementary transistor pair NPN and PNP in SOT-363 package CBI MMDT3946DW for amplification devices
Key Attributes
Model Number:
MMDT3946DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3946DW
Package:
SOT-363
Product Description
Dual Transistor (NPN + PNP) - SOT-363 Package
This complementary pair of transistors, housed in a SOT-363 plastic-encapsulated package, features one 3904-type NPN transistor and one 3906-type PNP transistor. Constructed with epitaxial planar die technology, these transistors are ideally suited for low-power amplification and switching applications. The device is identified by the making code K46.
Product Attributes
- Package Type: SOT-363
- Construction: Epitaxial Planar Die
- Complementary Pair: Yes (NPN + PNP)
- NPN Type: 3904
- PNP Type: 3906
- Making Code: K46
Technical Specifications
General Maximum Ratings (Ta=25 unless otherwise noted)
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VCBO | Collector-Base Voltage | 60 | V |
| VCEO | Collector-Emitter Voltage | 40 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current - Continuous | 0.2 | A |
| PC | Collector Power Dissipation | 0.2 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55-150 |
NPN 3904 Electrical Characteristics (Ta=25 unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC = 10A, IE=0 | 60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= 10A, IC=0 | 5 | V | |
| Collector cut-off current | ICBO | VCB= 30 V , IE=0 | 0.05 | A | |
| Collector cut-off current | ICEO | VCE= 30 V , IB=0 | 0.5 | A | |
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.05 | A | |
| DC current gain | hFE(1) | VCE=1V, IC= 0.1mA | 40 | ||
| hFE(2) | VCE=1V, IC= 1mA | 70 | |||
| hFE(3) | VCE=1V, IC= 10mA | 100 | 300 | ||
| hFE(4) | VCE=1V, IC= 50mA | 60 | |||
| hFE(5) | VCE=1V, IC= 100mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=10 mA, IB=1mA | 0.2 | V | |
| VCE(sat)2 | IC=50 mA, IB=5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 | IC= 10 mA, IB=1mA | 0.65 | 0.85 | V |
| VBE(sat)2 | IC= 50 mA, IB=5mA | 0.95 | V | ||
| Transition frequency | fT | VCE=20V,IC=20mA, f=100MHz | 300 | MHz | |
| Noise figure | NF | VCE=5V,IC=0.1mA, f=1KHz,Rg=1K | 5 | dB | |
| Output capacitance | Cob | VCB=5V,IE=0,f=1MHz | 4 | pF | |
| Delay time | td | 35 | nS | ||
| Rise time | tr | VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA | 35 | nS | |
| Storage time | tS | 200 | nS | ||
| Fall time | tf | VCC=3V, IC=10mA IB1=-IB2= 1mA | 50 | nS |
MMDT3946DW Maximum Ratings (Ta=25 unless otherwise noted)
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -40 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current - Continuous | -0.2 | A |
| PC | Collector Power Dissipation | 0.2 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55-150 |
PNP 3906 Electrical Characteristics (Ta=25 unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -0.05 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.05 | A | ||
| DC current gain | hFE(1) | VCE=-1V,IC=-0.1mA | 60 | |||
| hFE(2) | VCE=-1V,IC=-1mA | 80 | ||||
| hFE(3) | VCE=-1V,IC=-10mA | 100 | 300 | |||
| hFE(4) | VCE=-1V,IC=-50mA | 60 | ||||
| hFE(5) | VCE=-1V,IC=-100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA,IB=-1mA | -0.25 | V | ||
| VCE(sat)2 | IC=-50mA,IB=-5mA | -0.4 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| VBE(sat)2 | IC=-50mA,IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Noise figure | NF | VCE=-5V,IC=-0.1mA, f=1KHz,Rg=1K | 4 | dB | ||
| Delay time | td | 35 | nS | |||
| Rise time | tr | VCC=-3V, VBE=-0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Storage time | tS | 225 | nS | |||
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2= 1mA | 75 | nS |
2410121332_CBI-MMDT3946DW_C2828436.pdf
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