N Channel 100 Volt Mosfet Bruckewell MSP100N27 Trench DMOS Technology for Fast Switching Applications
Product Overview
The MSP100N27 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switches, synchronous rectifiers, and quick chargers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Testing: 100% EAS Guaranteed
- Package: TO-220
- Packing: 2,000/Box
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 27 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 19 | A | |||
| IDM | Pulsed Drain Current | 108 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.4mH) | 27 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.4mH) | 146 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 140 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | 150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | 60 | °C/W | |||
| RθJC | Maximum Junction-to-Case | 1.4 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250μA | 1 | 2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250μA | 100 | V | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V, TJ =25°C VDS =80V, VGS =0V, TJ =55°C | - | - | 10 100 | μA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | 47 | - | mΩ | |
| EAS | Single Pulse Avalanche Energy | VDD =50V, L =0.4mH, IAS =22A | 96 | - | mJ | |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C | - | 1.2 | V | |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | 27 | A | |
| ISM | Pulsed Source Current | - | 108 | A | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V ID =20A VGS =10V | -- | 60 | -- | nC |
| Qgs | Gate-Source Charge | -- | 9.7 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 11.8 | -- | nC | |
| td(on) | Turn-On Delay Time | VDS =50V ID =20A VGS =10V RG =3.3Ω | -- | 10.4 | -- | ns |
| tr | Rise Time | -- | 46 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 54 | -- | ns | |
| tf | Fall Time | -- | 10 | -- | ns | |
| CISS | Input Capacitance | VDS =20V VGS =0V f =1.0MHz | -- | 3870 | -- | pF |
| COSS | Output Capacitance | -- | 134 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 83 | -- | pF | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | - | - | - | Ω |
Package Dimensions (TO-220)
| REF | Min. | Max. | REF | Min. | Max. |
|---|---|---|---|---|---|
| A | 4.30 | 4.70 | D2 | 15.70 | 17.00 |
| A1 | 1.20 | 1.40 | E | 9.70 | 10.36 |
| A2 | 2.30 | 2.79 | e | 2.54 | BSC |
| b | 0.70 | 0.90 | H1 | 6.10 | 6.70 |
| b1 | 1.20 | 1.75 | L | 12.80 | 13.90 |
| c | 0.34 | 0.60 | L1 | - | 4.00 |
| D | 14.70 | 16.10 | Q | 2.60 | 3.00 |
| D1 | 8.60 | 9.30 | Ø | 3.55 | 3.95 |
Marking
MSP100N27
2412061551_Bruckewell-MSP100N27_C42407749.pdf
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