N Channel 100 Volt Mosfet Bruckewell MSP100N27 Trench DMOS Technology for Fast Switching Applications

Key Attributes
Model Number: MSP100N27
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
27A
RDS(on):
47mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
83pF
Number:
1 N-channel
Output Capacitance(Coss):
134pF
Input Capacitance(Ciss):
3.87nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MSP100N27
Package:
TO-220
Product Description

Product Overview

The MSP100N27 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switches, synchronous rectifiers, and quick chargers.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Certifications: RoHS Compliant, Green Device Available
  • Testing: 100% EAS Guaranteed
  • Package: TO-220
  • Packing: 2,000/Box

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 27 A
ID Continuous Drain Current (TC =100°C) 19 A
IDM Pulsed Drain Current 108 A
IAS Single Pulse Avalanche Current (L =0.4mH) 27 A
EAS Single Pulse Avalanche Energy (L =0.4mH) 146 mJ
PD Power Dissipation (TC =25°C) 140 W
TJ/TSTG Operating Junction and Storage Temperature -55 150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient 60 °C/W
RθJC Maximum Junction-to-Case 1.4 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250μA 1 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250μA 100 V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V ±100 nA
IDSS Drain-Source Leakage Current VDS =80V, VGS =0V, TJ =25°C
VDS =80V, VGS =0V, TJ =55°C
- - 10
100
μA
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =20A 47 -
EAS Single Pulse Avalanche Energy VDD =50V, L =0.4mH, IAS =22A 96 - mJ
VSD Diode Forward Voltage IS =1A, VGS =0V, TJ =25°C - 1.2 V
IS Continuous Source Current VG =VD =0V, Force Current - 27 A
ISM Pulsed Source Current - 108 A
Dynamic Characteristics
Qg Total Gate Charge VDS =80V ID =20A VGS =10V -- 60 -- nC
Qgs Gate-Source Charge -- 9.7 -- nC
Qgd Gate-Drain Charge -- 11.8 -- nC
td(on) Turn-On Delay Time VDS =50V ID =20A VGS =10V RG =3.3Ω -- 10.4 -- ns
tr Rise Time -- 46 -- ns
td(off) Turn-Off Delay Time -- 54 -- ns
tf Fall Time -- 10 -- ns
CISS Input Capacitance VDS =20V VGS =0V f =1.0MHz -- 3870 -- pF
COSS Output Capacitance -- 134 -- pF
CRSS Reverse Transfer Capacitance -- 83 -- pF
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz - - - Ω

Package Dimensions (TO-220)

REF Min. Max. REF Min. Max.
A 4.30 4.70 D2 15.70 17.00
A1 1.20 1.40 E 9.70 10.36
A2 2.30 2.79 e 2.54 BSC
b 0.70 0.90 H1 6.10 6.70
b1 1.20 1.75 L 12.80 13.90
c 0.34 0.60 L1 - 4.00
D 14.70 16.10 Q 2.60 3.00
D1 8.60 9.30 Ø 3.55 3.95

Marking

MSP100N27


2412061551_Bruckewell-MSP100N27_C42407749.pdf

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