PNP transistor small surface mount package medium power amplification switching CBI MMBT5401W device
Key Attributes
Model Number:
MMBT5401W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
MMBT5401W
Package:
SOT-323
Product Description
Product Overview
This PNP plastic-encapsulated transistor is designed as a complementary component to the MMBT5551W. Featuring a small surface mount package, it is ideal for medium power amplification and switching applications. The transistor is marked with 'K4M'.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT323
- Transistor Type: PNP
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -600 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -50 | nA | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 50 | |||
| VCE=-5V, IC=-10mA | 60 | |||||
| VCE=-5V, IC=-50mA | 300 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.5 | V | ||
| IC=-50mA, IB=-5mA | -0.2 | V | ||||
| IC=-50mA, IB=-5mA | -1 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-10mA , f=100MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 6 | pF | ||
Package Information
Package: SOT323
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2410121538_CBI-MMBT5401W_C5362105.pdf
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