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quality electronic component Bruckewell MSH60N063 N Channel MOSFET with excellent RDS ON and low gate charge factory
quality electronic component Bruckewell MSH60N063 N Channel MOSFET with excellent RDS ON and low gate charge factory

electronic component Bruckewell MSH60N063 N Channel MOSFET with excellent RDS ON and low gate charge

Key Attributes
Model Number: MSH60N063
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6A
RDS(on):
6.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
79pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
78W
Input Capacitance(Ciss):
2.133nF@30V
Gate Charge(Qg):
40.3nC@10V
Mfr. Part #:
MSH60N063
Package:
PDFN5x6-8
Product Description

Product Overview

The MSH60N063 is a high-performance N-Channel MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, making it suitable for demanding applications such as motor drives, power tools, and LED lighting.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSH
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: PDFN 5X6
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 90 A
ID Continuous Drain Current (TC =100°C) 55 A
IDM Pulsed Drain Current 360 A
IAS Single Pulse Avalanche Current, L =0.1mH 50 A
EAS Single Pulse Avalanche Energy, L =0.1mH 320 mJ
PD Power Dissipation (TC =25°C) 78 W
PD Power Dissipation (TC =100°C) 31 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient 62.5 °C/W
RθJC Maximum Junction-to-Case 1.6 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250µA 1.0 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250µA 60 V
gfs Forward Transconductance VDS =5V, ID =20A 39 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V ±100 nA
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =25°C 1 µA
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =55°C 20 µA
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =20A 4.7 6.3 mΩ
RDS (on) Static Drain-Source On-Resistance VGS =4.5V, ID =15A 6.8 9.0 mΩ
EAS Single Pulse Avalanche Energy VDD =40V, L =0.1mH, IAS =55A 151 mJ
VSD Diode Forward Voltage IS =20A, VGS =0V, TJ =25°C 1.2 V
IS Continuous Source Current 90 A
ISM Pulsed Source Current VG =VD =0V, Force Current 250 A
Dynamic Characteristics
Qg Total Gate Charge 40.3 nC
Qgs Gate-Source Charge 8 nC
Qgd Gate-Drain (“Miller”) Charge VDS =30V, ID =20A, VGS =10V 7.3 nC
td(on) Turn-On Delay Time 15.5 ns
tr Rise Time 3.1 ns
td(off) Turn-Off Delay Time 33.6 ns
tf Fall Time VDS =30V, RL =1.5Ω, VGS =10V, RG =6Ω 5.6 ns
CISS Input Capacitance VDS =30V, VGS =0V, f =1.0MHz 2133 pF
COSS Output Capacitance VDS =30V, VGS =0V, f =1.0MHz 399 pF
CRSS Reverse Transfer Capacitance VDS =30V, VGS =0V, f =1.0MHz 79 pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz 1.3 Ω

2412061551_Bruckewell-MSH60N063_C42407739.pdf

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