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quality Integrated Bias Resistor Network Transistor CBI MMUN5231DW for Simplified Surface Mount Electronics factory
quality Integrated Bias Resistor Network Transistor CBI MMUN5231DW for Simplified Surface Mount Electronics factory

Integrated Bias Resistor Network Transistor CBI MMUN5231DW for Simplified Surface Mount Electronics

Key Attributes
Model Number: MMUN5231DW
Product Custom Attributes
Input Resistor:
2.9kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5231DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, eliminating the need for external components. This series is designed for low power surface mount applications where board space is limited, simplifying circuit design, reducing board space, and decreasing component count. The devices are compliant with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material Compliance: RoHS
  • Package Type: SOT-363

Technical Specifications

Device Package Marking R1 (K) R2 (K) Shipping
MMUN5211DW SOT-363 7A 10 10 3000/Tape&Reel
MMUN5214DW SOT-363 7D 10 47 3000/Tape&Reel
MMUN5215DW SOT-363 7E 10 - 3000/Tape&Reel
MMUN5216DW SOT-363 7F 4.7 - 3000/Tape&Reel
MMUN5230DW SOT-363 7G 1 1 3000/Tape&Reel
MMUN5231DW SOT-363 7H 2.2 2.2 3000/Tape&Reel
MMUN5232DW SOT-363 7J 4.7 4.7 3000/Tape&Reel
MMUN5233DW SOT-363 7K 4.7 47 3000/Tape&Reel
MMUN5234DW SOT-363 7L 22 47 3000/Tape&Reel
MMUN5235DW SOT-363 7M 2.2 47 3000/Tape&Reel
MMUN5238DW SOT-363 7Q 2.2 - 3000/Tape&Reel
MMUN5241DW SOT-363 7T 100 - 3000/Tape&Reel
MMUN5212DW SOT-363 7B 22 22 3000/Tape&Reel
MMUN5213DW SOT-363 7C 47 47 3000/Tape&Reel
Characteristic Symbol Value Unit Condition
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (One Junction Heated) PD 187 (Note 1.) / 250 (Note 1.) / 385 (Note 2.) mW TA= 25C
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 670 (Note 1.) / 490 (Note 2.) C/W
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 493 (Note 1.) / 325 (Note 2.) C/W
Thermal Resistance Junction-to-Lead RJL 188 (Note 1.) / 208 (Note 2.) C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Collector Base Cutoff Current ICBO -100 nA VCB = 50 V
Collector Emitter Cutoff Current ICEO -500 nA VCE = 50 V
Collector Base Breakdown Voltage V(BR)CBO 50 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 50 V IC = 2 mA
Collector Emitter Saturation Voltage VCEsat 0.25 V IC = 10 mA, IB = 0.3 mA (MMUN5230DW, MMUN5231DW)
Output Voltage (on) VOL 0.2 V VCC = 5 V, RL = 1 K
Output Voltage (off) VOH 4.9 V VCC = 5 V, RL = 1 K
Input Resistor R1 7, 15.4, 32.9, 4.7, 3.3, 0.7, 1.5, 13, 28.6, 61.1, 1.54, 70, 130 K See Device Table
Resistor Ratio R1/R2 0.8, 0.17, 1.2, 0.055, 0.38, 0.038, 0.185, 0.56, 0.056 See Device Table

2410121707_CBI-MMUN5231DW_C21714284.pdf
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