N Channel 40 Volt MOSFET Bruckewell MSH40N065 Trench DMOS Technology for Fast Switching Applications
Key Attributes
Model Number:
MSH40N065
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Output Capacitance(Coss):
171pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
1.54nF
Gate Charge(Qg):
16.2nC@10V
Mfr. Part #:
MSH40N065
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH40N065 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Typical applications include MB, VGA, Vcore, POL, and SMPS 2nd SR power supplies.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Compliance: RoHS, Green Product
- EAS Guarantee: 100% Guaranteed
- Package Type: PDFN 5X6
- Packing: 3,000/Reel
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 40 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| ID (Continuous Drain Current) | (TC =25°C) | 75 | A | ||
| ID (Continuous Drain Current) | (TC =100°C) | 45 | A | ||
| IDM (Pulsed Drain Current) | 300 | A | |||
| IAS (Single Pulse Avalanche Current) | L =0.1mH | 39 | A | ||
| EAS (Single Pulse Avalanche Energy) | L =0.1mH | 76 | mJ | ||
| PD (Power Dissipation) | (TC =25°C) | 83 | W | ||
| PD (Power Dissipation) | (TA =25°C) | 2 | W | ||
| TJ/TSTG (Operating Junction and Storage Temperature) | -55 | +150 | °C | ||
| Thermal Resistance Ratings | |||||
| RθJA (Maximum Junction-to-Ambient) | 62.5 | °C/W | |||
| RθJC (Maximum Junction-to-Case) | 1.5 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | |||||
| VGS (th) (Gate Threshold Voltage) | VDS =VGS, ID =250µA | 1.2 | 1.6 | 2.5 | V |
| BVDSS (Drain-Source Breakdown Voltage) | VGS =0V, ID =250µA | 40 | - | - | V |
| gfs (Forward Transconductance) | VDS =3V, ID =4.5A | - | 16 | - | S |
| IGSS (Gate-Source Leakage Current) | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS (Drain-Source Leakage Current) | VDS =40V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| IDSS (Drain-Source Leakage Current) | VDS =32V, VGS =0V, TJ =125°C | - | - | 10 | µA |
| RDS (on) (Static Drain-Source On-Resistance) | VGS =10V, ID =20A | - | 5.6 | 6.5 | mΩ |
| RDS (on) (Static Drain-Source On-Resistance) | VGS =4.5V, ID =10A | - | 6.9 | 8.5 | mΩ |
| EAS (Single Pulse Avalanche Energy) | VDD =25V, L =0.1mH, IAS =25A | 31 | - | - | mJ |
| VSD (Diode Forward Voltage) | IS =20A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS (Continuous Source Current) | - | - | 75 | A | |
| ISM (Pulsed Source Current) | - | - | 150 | A | |
| Dynamic Characteristics | |||||
| Qg (Total Gate Charge) | - | 16.2 | - | nC | |
| Qgs (Gate-Source Charge) | - | 3.85 | - | nC | |
| Qgd (Gate-Drain Charge) | VDS =20V, ID =10A, VGS =4.5V | - | 6.05 | - | nC |
| td(on) (Turn-On Delay Time) | - | 13.6 | - | ns | |
| tr (Rise Time) | - | 2.5 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 68 | - | ns | |
| tf (Fall Time) | VDS =15V, ID =1A, VGS =10V, RG =6Ω | - | 5 | - | ns |
| CISS (Input Capacitance) | VDS =25V, VGS =0V, f =1.0MHz | - | 1540 | - | pF |
| COSS (Output Capacitance) | VDS =25V, VGS =0V, f =1.0MHz | - | 171 | - | pF |
| CRSS (Reverse Transfer Capacitance) | VDS =25V, VGS =0V, f =1.0MHz | - | 115 | - | pF |
| Rg (Gate Resistance) | VGS =VDS =0V, f =1.0MHz | - | 1.4 | - | Ω |
2412061551_Bruckewell-MSH40N065_C42407735.pdf
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