Dual Bias Resistor Transistor CBI MMUN5212DW NPN Silicon Surface Mount Device with RoHS Compliance

Key Attributes
Model Number: MMUN5212DW
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5212DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, eliminating the need for external components. Designed to simplify circuit design, reduce board space, and decrease component count, they are ideal for low-power surface mount applications where space is limited. The series offers various resistor configurations and is compliant with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material Compliance: RoHS
  • Package Type: SOT-363

Technical Specifications

Model Marking R1 (K) R2 (K) Shipping hFE (Min) IEBO (Max) (mA) VCEsat (Max) (V) VOL (Max) (V) VOH (Min) (V) R1 (K) R1/R2 Ratio
MMUN5211DW 7A 10 10 3000/Tape&Reel 35 0.5 0.25 0.2 4.9 7 0.8
MMUN5212DW 7B 22 22 3000/Tape&Reel 60 0.2 0.25 0.2 4.9 22 0.8
MMUN5213DW 7C 47 47 3000/Tape&Reel 80 0.1 0.25 0.2 4.9 47 0.8
MMUN5214DW 7D 10 47 3000/Tape&Reel 80 0.2 0.25 0.2 4.9 10 0.17
MMUN5215DW 7E 10 3000/Tape&Reel 160 0.9 0.25 0.2 4.9 10 -
MMUN5216DW 7F 4.7 3000/Tape&Reel 160 1.9 0.25 0.2 4.9 4.7 -
MMUN5230DW 7G 1 1 3000/Tape&Reel 3 4.3 0.25 0.2 4.9 1 0.8
MMUN5231DW 7H 2.2 2.2 3000/Tape&Reel 8 2.3 0.25 0.2 4.9 2.2 0.8
MMUN5232DW 7J 4.7 4.7 3000/Tape&Reel 15 1.5 0.25 0.2 4.9 4.7 0.8
MMUN5233DW 7K 4.7 47 3000/Tape&Reel 80 0.18 0.25 0.2 4.9 4.7 0.055
MMUN5234DW 7L 22 47 3000/Tape&Reel 80 0.13 0.25 0.2 4.9 22 0.38
MMUN5235DW 7M 2.2 47 3000/Tape&Reel 80 0.2 0.25 0.2 4.9 2.2 0.038
MMUN5238DW 7Q 2.2 3000/Tape&Reel 160 4 0.25 0.2 4.9 2.2 -
MMUN5241DW 7T 100 3000/Tape&Reel 160 0.1 0.25 0.2 4.9 100 -
Maximum Ratings
Rating Symbol Value (TA=25C) Unit Notes
Collector-Base Voltage VCBO 50 Vdc Common for Q1 and Q2
Collector-Emitter Voltage VCEO 50 Vdc Common for Q1 and Q2
Collector Current IC 100 mAdc Common for Q1 and Q2
Thermal Characteristics
Characteristic Symbol Max Unit (One Junction Heated)
Total Device Dissipation PD 187 (Note 1.) mW TA=25C
Derate above 25C 1.5 (Note 1.) mW/C
Thermal Resistance Junction-to-Ambient RJA 670 (Note 1.) C/W
Characteristic Symbol Max Unit (Both Junctions Heated)
Total Device Dissipation PD 250 (Note 1.) mW TA=25C
Derate above 25C 2.0 (Note 1.) mW/C
Thermal Resistance Junction-to-Ambient RJA 493 (Note 1.) C/W
Thermal Resistance Junction-to-Lead RJL 188 (Note 1.) C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Notes on Thermal Characteristics:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad

2410121707_CBI-MMUN5212DW_C21714279.pdf

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