Dual Bias Resistor Transistor CBI MMUN5212DW NPN Silicon Surface Mount Device with RoHS Compliance
Product Overview
The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, eliminating the need for external components. Designed to simplify circuit design, reduce board space, and decrease component count, they are ideal for low-power surface mount applications where space is limited. The series offers various resistor configurations and is compliant with RoHS requirements.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material Compliance: RoHS
- Package Type: SOT-363
Technical Specifications
| Model | Marking | R1 (K) | R2 (K) | Shipping | hFE (Min) | IEBO (Max) (mA) | VCEsat (Max) (V) | VOL (Max) (V) | VOH (Min) (V) | R1 (K) | R1/R2 Ratio |
|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN5211DW | 7A | 10 | 10 | 3000/Tape&Reel | 35 | 0.5 | 0.25 | 0.2 | 4.9 | 7 | 0.8 |
| MMUN5212DW | 7B | 22 | 22 | 3000/Tape&Reel | 60 | 0.2 | 0.25 | 0.2 | 4.9 | 22 | 0.8 |
| MMUN5213DW | 7C | 47 | 47 | 3000/Tape&Reel | 80 | 0.1 | 0.25 | 0.2 | 4.9 | 47 | 0.8 |
| MMUN5214DW | 7D | 10 | 47 | 3000/Tape&Reel | 80 | 0.2 | 0.25 | 0.2 | 4.9 | 10 | 0.17 |
| MMUN5215DW | 7E | 10 | 3000/Tape&Reel | 160 | 0.9 | 0.25 | 0.2 | 4.9 | 10 | - | |
| MMUN5216DW | 7F | 4.7 | 3000/Tape&Reel | 160 | 1.9 | 0.25 | 0.2 | 4.9 | 4.7 | - | |
| MMUN5230DW | 7G | 1 | 1 | 3000/Tape&Reel | 3 | 4.3 | 0.25 | 0.2 | 4.9 | 1 | 0.8 |
| MMUN5231DW | 7H | 2.2 | 2.2 | 3000/Tape&Reel | 8 | 2.3 | 0.25 | 0.2 | 4.9 | 2.2 | 0.8 |
| MMUN5232DW | 7J | 4.7 | 4.7 | 3000/Tape&Reel | 15 | 1.5 | 0.25 | 0.2 | 4.9 | 4.7 | 0.8 |
| MMUN5233DW | 7K | 4.7 | 47 | 3000/Tape&Reel | 80 | 0.18 | 0.25 | 0.2 | 4.9 | 4.7 | 0.055 |
| MMUN5234DW | 7L | 22 | 47 | 3000/Tape&Reel | 80 | 0.13 | 0.25 | 0.2 | 4.9 | 22 | 0.38 |
| MMUN5235DW | 7M | 2.2 | 47 | 3000/Tape&Reel | 80 | 0.2 | 0.25 | 0.2 | 4.9 | 2.2 | 0.038 |
| MMUN5238DW | 7Q | 2.2 | 3000/Tape&Reel | 160 | 4 | 0.25 | 0.2 | 4.9 | 2.2 | - | |
| MMUN5241DW | 7T | 100 | 3000/Tape&Reel | 160 | 0.1 | 0.25 | 0.2 | 4.9 | 100 | - | |
| Maximum Ratings | |||||||||||
| Rating | Symbol | Value (TA=25C) | Unit | Notes | |||||||
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 | |||||||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 | |||||||
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 | |||||||
| Thermal Characteristics | |||||||||||
| Characteristic | Symbol | Max Unit (One Junction Heated) | |||||||||
| Total Device Dissipation | PD | 187 (Note 1.) | mW | TA=25C | |||||||
| Derate above 25C | 1.5 (Note 1.) | mW/C | |||||||||
| Thermal Resistance Junction-to-Ambient | RJA | 670 (Note 1.) | C/W | ||||||||
| Characteristic | Symbol | Max Unit (Both Junctions Heated) | |||||||||
| Total Device Dissipation | PD | 250 (Note 1.) | mW | TA=25C | |||||||
| Derate above 25C | 2.0 (Note 1.) | mW/C | |||||||||
| Thermal Resistance Junction-to-Ambient | RJA | 493 (Note 1.) | C/W | ||||||||
| Thermal Resistance Junction-to-Lead | RJL | 188 (Note 1.) | C/W | ||||||||
| Junction and Storage Temperature | TJ, Tstg | 55 to +150 | C | ||||||||
| Notes on Thermal Characteristics: | |||||||||||
| 1. FR4 @ Minimum Pad | |||||||||||
| 2. FR4 @ 1.0 x 1.0 inch Pad | |||||||||||
2410121707_CBI-MMUN5212DW_C21714279.pdf
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