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quality N Channel Power MOSFET BORN BMI10N331 with TO 252 2 Package and 30 Milliohm On Resistance at 10V Gate factory
quality N Channel Power MOSFET BORN BMI10N331 with TO 252 2 Package and 30 Milliohm On Resistance at 10V Gate factory

N Channel Power MOSFET BORN BMI10N331 with TO 252 2 Package and 30 Milliohm On Resistance at 10V Gate

Key Attributes
Model Number: BMI10N331
Product Custom Attributes
Mfr. Part #:
BMI10N331
Package:
TO-252-2
Product Description

Product Overview

The BMI10N331 is an N-Channel MOSFET designed for various power management applications. It features a high breakdown voltage of 100V and a continuous drain current of 28A. Key advantages include low on-resistance (RDS(on) TYP=30m at VGS=10V), low Crss, fast switching speeds, and improved dv/dt capability. This MOSFET is suitable for load switching, PWM applications, and general power management tasks.

Product Attributes

  • Brand: BORN
  • Model: BMI10N331
  • Package Type: TO-252-2
  • Marking: 10N331

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Features
V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 100 V
ID Drain Current TC=25C 28 A
ID Drain Current TC=100C 18 A
RDS(on) Static Drain-Source On Resistance VGS=10V, ID=10A 30 33 m
RDS(on) Static Drain-Source On Resistance VGS=4.5V, ID=8A 35 42 m
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
ID Drain Current TC=25C 28 A
ID Drain Current TC=100C 18 A
IDM Drain Current-Pulsed (1) 112 A
VGS Gate-Source Voltage 20 V
EAS Single Pulsed Avalanche Energy (2) 34 mJ
PD Power Dissipation TC=25C 50 W
Thermal Characteristics
TJ, Tstg Junction and Storage Temperature Range -55 +150 C
RJC Thermal Resistance From Junction to Case 2.5 C/W
RJA Thermal Resistance from Junction to Ambient 64 C/W
Electrical Characteristics
V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 100 V
IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS=0V 1 uA
IGSS Gate-Body Leakage Current VGS = 20V, VDS=0V 100 nA
VGS(TH) Gate Threshold Voltage VGS = VDS, ID=250uA 1.3 1.8 2.3 V
RDS(ON) Static Drain-Source On Resistance VGS=10V, ID=10A 30 33 m
RDS(ON) Static Drain-Source On Resistance VGS=4.5V, ID=8A 35 42 m
Dynamic Characteristics
Ciss Input Capacitance VDS =50V, VGS =0V, f = 1MHz 445 pF
Coss Output Capacitance 171 pF
Crss Reverse Transfer Capacitance 3.2 pF
Switching Characteristics (3)
Td(on) Turn-On Delay Time VDD=50V, VGS=10V, RG =5, ID=10A 12 ns
Tr Turn-On Rise Time 15 ns
Td(off) Turn-Off Delay Time 20 ns
Tf Turn-Off Fall Time 6 ns
Qg Total Gate Charge VDS=50V, VGS=10V, ID=10A 8.07 nC
Qgs Source-Gate Charge 1.38 nC
Qgd Gate-Drain Charge 1.84 nC
Source-Drain Diode Characteristics
IS Continuous Diode Forward Current 28 A
VSD Diode Forward Voltage VGS=0V, IS=10A 1.2 V
trr Reverse Recovery Time IF=10A, dIF/dt=100A/us 37 ns
Qrr Reverse Recovery Charge 80 nC

Notes:
(1) Repetitive Rating: pulse width limited by maximum junction temperature.
(2) VDD =50V, RG=25, L=0.5mH, Starting TJ=25C.
(3) Pulsed Test: pulse width 300us, duty cycle 2%.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2511241925_BORN-BMI10N331_C52993696.pdf

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