N Channel MOSFET Bruckewell MSD200N120 with high cell density and RoHS compliant green device status
Key Attributes
Model Number:
MSD200N120
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
16A
RDS(on):
120mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Number:
1 N-channel
Output Capacitance(Coss):
48pF
Pd - Power Dissipation:
69W
Input Capacitance(Ciss):
872pF
Gate Charge(Qg):
13.7nC@10V
Mfr. Part #:
MSD200N120
Package:
TO-252
Product Description
Product Overview
The MSD200N120 is a high-performance N-Channel MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient performance. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Typical applications include networking, load switches, and LED lighting.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSD Series
- Compliance: RoHS Compliant, Green Device Available
- Testing: 100% EAS Guaranteed, Full Function Reliability Approved
- Package Type: TO-252
- Packing: 2,500/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | 16 | A | |||
| ID | Continuous Drain Current (TC =100°C) | 10 | A | |||
| IDM | Pulsed Drain Current | 32 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 28 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 39.2 | mJ | |||
| PD | Power Dissipation (TC =25°C) | 69 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient | 62 | °C/W | |||
| RθJC | Maximum Junction-to-Case | 1.8 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 2.0 | - | 3.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 200 | - | - | V |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =160V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =160V, VGS =0V, TJ =55°C | - | - | 10 | µA |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =10A | - | 96 | 120 | mΩ |
| EAS | Single Pulse Avalanche Energy | VDD =50V, L =0.1mH, IAS =20A | 20 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current | - | - | 16 | A | |
| ISM | Pulsed Source Current | VG =VD =0V, Force Current | - | - | 32 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =100V, ID =10A, VGS =10V | - | 13.7 | - | nC |
| Qgs | Gate-Source Charge | VDS =100V, ID =10A, VGS =10V | - | 3.7 | - | nC |
| Qgd | Gate-Drain Charge | VDS =100V, ID =10A, VGS =10V | - | 3.3 | - | nC |
| td(on) | Turn-On Delay Time | VDS =100V, ID =10A, VGS =10V, RG =3.3Ω | - | 8.3 | - | ns |
| tr | Rise Time | VDS =100V, ID =10A, VGS =10V, RG =3.3Ω | - | 19 | - | ns |
| td(off) | Turn-Off Delay Time | VDS =100V, ID =10A, VGS =10V, RG =3.3Ω | - | 14.7 | - | ns |
| tf | Fall Time | VDS =100V, ID =10A, VGS =10V, RG =3.3Ω | - | 3.9 | - | ns |
| CISS | Input Capacitance | VDS =100V, VGS =0V, f =1.0MHz | - | 872 | - | pF |
| COSS | Output Capacitance | VDS =100V, VGS =0V, f =1.0MHz | - | 48 | - | pF |
| CRSS | Reverse Transfer Capacitance | VDS =100V, VGS =0V, f =1.0MHz | - | 5.3 | - | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | - | 0.9 | - | Ω |
2412061551_Bruckewell-MSD200N120_C42407725.pdf
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