86--136 6733 2386
quality switching N Channel MOSFET BORN BMF10N65 with 10A continuous drain current and RoHS compliant design factory
quality switching N Channel MOSFET BORN BMF10N65 with 10A continuous drain current and RoHS compliant design factory

switching N Channel MOSFET BORN BMF10N65 with 10A continuous drain current and RoHS compliant design

Key Attributes
Model Number: BMF10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
900mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
1.72nF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
BMF10N65
Package:
TO-220F
Product Description

Product Overview

The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET offers a VDSS of 650V and a continuous drain current (ID) of 10A. It features fast switching capabilities and low gate charge, making it an efficient component for power conversion applications. The device is constructed with molded plastic, rated UL Flammability Classification 94V-0, and is compliant with the EU RoHS 2011/65/EU directive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Product Line: BMx10N65
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Certifications: EU RoHS 2011/65/EU directive compliant
  • Lead-Free: Yes

Technical Specifications

Symbol Parameters Conditions Value Unit TO-220AB/TO-263 TO-220F
Maximum Ratings (@TA=25C unless otherwise noted)
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±30 V
ID Continue Drain Current 10 A
IDM Pulsed Drain Current (Note1) 40 A
PD Power Dissipation 150 W 31
EAS Single Pulse Avalanche Energy (Note1) 845 mJ
TJ Junction Temperature Range -55 to +150 C
TSTG Storage Temperature Range -55 to +150 C
RJC Thermal Resistance, Junction to Case 0.83 C/W 4
RJA Thermal Resistance, Junction to Ambient 62.5 C/W
Electrical Characteristics (TA=25C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID=250uA 650 690 V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS=0V 1 A
IGSS Gate-Source Leakage Current VGS = ±30V, VDS=0V ±100 nA
VGS(TH) Gate Threshold Voltage VGS = VDS, ID=250uA 2 4 V
RDS(on) Static Drain-source On Resistance VGS=10V, ID=5A 0.79 0.9
gfs Forward Transconductance VDS=40V, ID=5A 11 S
Ciss Input capacitance VDS = 25V, VGS =0V, f = 1MHz 1720 pF
Coss Output capacitance 140 pF
Crss Reverse transfer capacitance 11 pF
td(on) Turn-on delay time (Note1) VDD=325V, ID =10A, RG =25 23 ns
tr Turn-on Rise time (Note1) 15 ns
td(off) Turn -Off Delay Time (Note1) 90 ns
tf Turn -Off Fall time (Note1) 30 ns
Qgs Gate to Source Charge (Note1) VDD=520V, VGS=10V, ID=10A 5 nC
Qgd Gate to Drain Charge (Note1) 16 nC
Qg Total Gate Charge (Note1) 32 nC
VSD Diode Forward Voltage ISD=10A 1.1 V
IS Diode Forward Current 10 A
ISM Diode Pulsed Current 40 A
Trr Reverse Recovery Time (Note1) ISD =10A, VGS=0V, dIF/dt=100A/s 310 ns
Qrr Reverse Recovery Charge (Note1) 4.1 C
Ordering Information
Order Code Package Base Qty Delivery Mode
BME10N65/G TO-220AB 50pcs/tube 1kpcs/box, 5kpcs/carton
BMF10N65/G TO-220F 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK10N65/G TO-263 50pcs/tube 1kpcs/box, 5kpcs/carton
BMK10N65-R/G TO-263 800pcs/reel 800pcs/box, 4kpcs/carton

Note1: Pulse test: 300 s pulse width, 2% duty cycle.

Note: The order code with "G" means using a thick frame.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2412021443_BORN-BMF10N65_C42402385.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.