100 Volt N Channel MOSFET Bruckewell MSB100N042SB with 100 Percent EAS Guarantee and RoHS Compliance
Key Attributes
Model Number:
MSB100N042SB
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-50℃~+150℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Output Capacitance(Coss):
1.69nF
Input Capacitance(Ciss):
6.68nF
Pd - Power Dissipation:
275W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
MSB100N042SB
Package:
TO-263
Product Description
Product Overview
The MSB100N042SB is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-state resistance (RDS(ON)), deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche and commutation modes. Ideal for high efficiency fast switching applications, this device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key applications include networking, load switching, synchronous rectification, and quick chargers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Features | ||||||
| RDS(ON) | On-State Resistance | VGS = 10V | - | - | 4.2 | m |
| - | Switching Performance | Fast | - | |||
| - | dv/dt Capability | Improved | - | |||
| EAS | Avalanche Energy | 100% Guaranteed | - | |||
| Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | - | - | - | 100 | V |
| VGS | Gate-Source Voltage | - | -20 | - | +12 | V |
| ID | Continuous Drain Current (TC=25C) | - | - | - | 150 | A |
| ID | Continuous Drain Current (TC=100C) | - | - | - | 95 | A |
| IDM | Pulsed Drain Current | - | - | - | 600 | A |
| IAS | Single Pulse Avalanche Current (L=0.1mH) | - | - | - | 87 | A |
| EAS | Single Pulse Avalanche Energy (L=0.1mH) | - | - | - | 378 | mJ |
| PD | Power Dissipation (TC=25C) | - | - | - | 275 | W |
| PD | Power Dissipation (TA=25C) | - | - | - | 2 | W |
| TJ/TSTG | Operating Junction and Storage Temperature | - | -50 | - | +150 | C |
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | - | - | - | 62.5 | C/W |
| RJC | Maximum Junction-to-Case | - | - | - | 0.45 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.2 | 1.8 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 100 | - | - | V |
| gfs | Forward Transconductance | VDS =10V, ID =3A | - | 20 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | - | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =100V, VGS =0V, TJ =25C | - | - | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V, TJ =85C | - | - | 10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | - | 3.5 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =15A | - | - | 5.0 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | 4.2 | 6.0 | m |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =40A | 80 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =20A, VGS =0V, TJ =25C | - | - | 1.2 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 150 | A |
| ISM | Pulsed Source Current | - | - | - | 300 | A |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V ID =10A VGS =10V | - | 110 | - | nC |
| Qgs | Gate-Source Charge | - | - | 11.5 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 28 | - | nC |
| td(on) | Turn-On Delay Time | VDS =50V ID =1A VGS =10V RG =6 | - | 23 | - | ns |
| tr | Rise Time | - | - | 32 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 157 | - | ns |
| tf | Fall Time | - | - | 115 | - | ns |
| CISS | Input Capacitance | VDS =25V VGS =0V f =1.0MHz | - | 6680 | - | pF |
| COSS | Output Capacitance | - | - | 1690 | - | pF |
| CRSS | Reverse Transfer Capacitance | - | - | 78 | - | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | - | 1.9 | - | |
| Package Information | ||||||
| Package Type | TO-263 | - | - | |||
| Packing | 800/Reel | - | - | |||
| Package Dimensions (Millimeter) | ||||||
| REF | Min. | Max. | REF | Min. | Max. | - |
| A | 4.37 | 4.77 | E | 9.80 | 10.36 | - |
| A1 | 0.00 | 0.25 | E1 | 7.06 | - | - |
| A2 | 2.20 | 2.80 | e | 2.54 BSC | - | - |
| b | 0.70 | 0.96 | H | 14.70 | 15.70 | - |
| b2 | 1.17 | 1.47 | L | 2.00 | 2.60 | - |
| c | 0.30 | 0.60 | L1 | 1.07 | 1.47 | - |
| c2 | 1.22 | 1.42 | L2 | 1.40 | 1.75 | - |
| D | 8.50 | 9.30 | L3 | 0.25 BSC | - | - |
| D1 | 6.60 | - | 0 | 9 | - | |
2412061551_Bruckewell-MSB100N042SB_C42407721.pdf
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