CBI BC80725W SOT323 Plastic Encapsulated PNP Transistor with Collector Emitter Breakdown Voltage 45V

Key Attributes
Model Number: BC807-25W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807-25W
Package:
SOT-323
Product Description

Product Overview

The SOT-323 Plastic-Encapsulated Transistor is an epitaxial planar die transistor ideally suited for automatic insertion. It offers complementary functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This transistor is designed for various electronic applications requiring reliable PNP transistor performance.

Product Attributes

  • Package Type: SOT-323
  • Transistor Type: PNP
  • Construction: Epitaxial planar die
  • Complementary to: BC817W
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Symbol Parameter Test Conditions Min Max Unit
VCBO Collector-base breakdown voltage IC=-10A, IE=0 -50 V
VCEO Collector-emitter breakdown voltage IC=-10mA, IB =0 -45 V
VEBO Emitter-base breakdown voltage IE=-1A, IC=0 -5 V
ICBO Collector cut-off current VCB=-20 V, IE=0 -0.1 A
ICEO Collector cut-off current VCE=-20 V, IB=0 -0.2 A
IEBO Emitter cut-off current VEB=-5 V, IC=0 -0.1 A
hFE(1) DC current gain VCE=--1V, IC= -100mA 100 600
hFE(2) DC current gain VCE=-1V, IC= -500mA 40
VCE(sat) Collector-emitter saturation voltage IC=-500mA, IB=-50 mA -0.7 V
VBE(on) Base-emitter voltage VCE= -1V, IC= -500mA -1.2 V
fT Transition frequency VCE=-5 V, IC= -10mA 80 MHz
Cob Collector output capacitance VCB=-10V, f=1MHz 10 pF

hFE Classification

Rank Range Marking
BC807-16W 100-250 5A
BC807-25W 160-400 5B
BC807-40W 250-600 5C

Maximum Ratings

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -500 mA
PC Collector Power Dissipation 200 mW
RJA Thermal Resistance From Junction To Ambient 417 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55+150

Pinout

  1. BASE
  2. EMITTER
  3. COLLECTOR

2410121440_CBI-BC807-25W_C21714272.pdf

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