CBI BC80725W SOT323 Plastic Encapsulated PNP Transistor with Collector Emitter Breakdown Voltage 45V
Product Overview
The SOT-323 Plastic-Encapsulated Transistor is an epitaxial planar die transistor ideally suited for automatic insertion. It offers complementary functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This transistor is designed for various electronic applications requiring reliable PNP transistor performance.
Product Attributes
- Package Type: SOT-323
- Transistor Type: PNP
- Construction: Epitaxial planar die
- Complementary to: BC817W
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base breakdown voltage | IC=-10A, IE=0 | -50 | V | |
| VCEO | Collector-emitter breakdown voltage | IC=-10mA, IB =0 | -45 | V | |
| VEBO | Emitter-base breakdown voltage | IE=-1A, IC=0 | -5 | V | |
| ICBO | Collector cut-off current | VCB=-20 V, IE=0 | -0.1 | A | |
| ICEO | Collector cut-off current | VCE=-20 V, IB=0 | -0.2 | A | |
| IEBO | Emitter cut-off current | VEB=-5 V, IC=0 | -0.1 | A | |
| hFE(1) | DC current gain | VCE=--1V, IC= -100mA | 100 | 600 | |
| hFE(2) | DC current gain | VCE=-1V, IC= -500mA | 40 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA, IB=-50 mA | -0.7 | V | |
| VBE(on) | Base-emitter voltage | VCE= -1V, IC= -500mA | -1.2 | V | |
| fT | Transition frequency | VCE=-5 V, IC= -10mA | 80 | MHz | |
| Cob | Collector output capacitance | VCB=-10V, f=1MHz | 10 | pF |
hFE Classification
| Rank | Range | Marking |
|---|---|---|
| BC807-16W | 100-250 | 5A |
| BC807-25W | 160-400 | 5B |
| BC807-40W | 250-600 | 5C |
Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | -50 | V |
| VCEO | Collector-Emitter Voltage | -45 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current | -500 | mA |
| PC | Collector Power Dissipation | 200 | mW |
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55+150 |
Pinout
- BASE
- EMITTER
- COLLECTOR
2410121440_CBI-BC807-25W_C21714272.pdf
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