N Channel MOSFET BORN BMF7N65G with 650V Drain Source Voltage and 7A Continuous Drain Current
Key Attributes
Model Number:
BMF7N65G
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-
RDS(on):
1.45Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
BMF7N65G
Package:
TO-220F
Product Description
Product Overview
The BMx7N65 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 7A. The MOSFET offers fast switching speeds and low gate charge, making it suitable for efficient power applications. Specifications are subject to change; please refer to http://www.born-tw.com for the most current information.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Type: N-Channel MOSFET
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: Lead-free in compliance with EU RoHS 2011/65/EU directive
- Solder Bath Temperature: 275C maximum, 10s per JESD 22-B106
Technical Specifications
| Model/Part Number | Package | VDSS (V) | ID (A) | RDS(ON) @VGS=10V (, TYP) | Power Dissipation (W) | Ordering Information (Base Qty) |
|---|---|---|---|---|---|---|
| BMx7N65 | TO-220AB | 650 | 7 | 1.21 | 100 | BME7N65/G (50pcs/tube) |
| BMx7N65 | TO-220F | 650 | 7 | 1.21 | 36 | BMF7N65/G (50pcs/tube) |
| BMx7N65 | TO-263 | 650 | 7 | 1.21 | 108 | BMK7N65/G (50pcs/tube) |
| BMx7N65 | TO-263 (Reel) | 650 | 7 | 1.21 | 108 | BMK7N65-R/G (800pcs/reel) |
| BMx7N65 | TO-252 | 650 | 7 | 1.21 | 108 | BMI7N65/G (2500pcs/reel) |
| Symbol | Parameters | Conditions | Value (TYP) | Unit | TO-220AB/TO-263 | TO-220F | TO-252 |
|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | @TA=25C | 650 | V– | – | – | |
| VGS | Gate-Source Voltage | @TA=25C | 30 | V– | – | – | |
| ID | Continue Drain Current | @TA=25C | 7 | A– | – | – | |
| IDM | Pulsed Drain Current (Note1) | @TA=25C | 28 | A– | – | – | |
| PD | Power Dissipation | @TA=25C | 100 / 36 / 108 | W100 | 36 | 108 | |
| EAS | Single Pulse Avalanche Energy (Note1) | @TA=25C | 350 | mJ– | – | – | |
| TJ | Junction Temperature Range | 150 | C | – | – | – | |
| TSTG | Storage Temperature Range | -55 to +150 | C | – | – | – | |
| RJC | Thermal Resistance, Junction to Case | 1.25 / 3.46 / 1.16 | C/W | 1.25 | 3.46 | 1.16 | |
| RJA | Thermal Resistance, Junction to Ambient | 62.5 / 62.5 / 100 | C/W | 62.5 | 62.5 | 100 | |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 | V– | – | – | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | – | – | – |
| IGSS | Gate- Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA– | – | – | |
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | V– | – | – | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=3.5A | 1.21 | – | – | – | |
| gfs | Forward Transconductance | VDS=15V, ID=7A | 6.5 | S | – | – | – |
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 1130 | pF– | – | – | |
| Coss | Output capacitance | VDS = 25V, VGS =0V, f = 1MHz | 92 | pF– | – | – | |
| Crss | Reverse transfer capacitance | VDS = 25V, VGS =0V, f = 1MHz | 5.3 | pF– | – | – | |
| Td(on) | Turn-on delay time (Note1) | VDD=325V, ID =7A, RG =10 | 18 | ns | – | – | – |
| Tr | Turn-on Rise time (Note1) | VDD=325V, ID =7A, RG =10 | 19 | ns | – | – | – |
| Td(off) | Turn -Off Delay Time (Note1) | VDD=325V, ID =7A, RG =10 | 39 | ns | – | – | – |
| Tf | Turn -Off Fall time (Note1) | VDD=325V, ID =7A, RG =10 | 18 | ns | – | – | – |
| Qgs | Gate to Source Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 5 | nC– | – | – | |
| Qgd | Gate to Drain Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 9 | nC– | – | – | |
| Qg | Total Gate Charge (Note1) | VDD=520V, VGS=10V, ID=7A | 23 | nC– | – | – | |
| VSD | Diode Forward Voltage | ISD=7A | 1.4 | V– | – | – | |
| IS | Diode Forward Current | 7 | A– | – | – | ||
| ISM | Diode Pulsed Current | 28 | A– | – | – | ||
| Trr | Reverse Recovery Time (Note1) | ISD =7A, VGS=0V, dIF/dt=100A/s | 420 | ns | – | – | – |
| Qrr | Reverse Recovery Charge (Note1) | ISD =7A, VGS=0V, dIF/dt=100A/s | 1.9 | C | – | – | – |
Note1: Pulse test: 300 s pulse width, 2% duty cycle.
2412021443_BORN-BMF7N65G_C42402383.pdf
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