High Reliability Dual NPN Transistor CBI MMDT2222ADW Featuring SOT363 Package for Electronic Circuits
Key Attributes
Model Number:
MMDT2222ADW
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Number:
2 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT2222ADW
Package:
SOT-363
Product Description
Product Overview
This product features plastic-encapsulated transistors with complementary PNP types available, specifically the MMDT2907ADW. It is designed for switching applications, offering defined delay, rise, storage, and fall times. The device also exhibits characteristics suitable for amplification and general-purpose electronic circuits, with parameters like DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), and transition frequency (fT) detailed.
Product Attributes
- Type: Dual Transistor (NPN+NPN)
- Marking: K1P
- Package: SOT-363
- Complementary PNP Type available
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Value | Units | |
|---|---|---|---|
| Collector-Base Voltage (VCBO) | 75 | V | |
| Collector-Emitter Voltage (VCEO) | 40 | V | |
| Emitter-Base Voltage (VEBO) | 6 | V | |
| Collector Current - Continuous (IC) | 600 | mA | |
| Collector Power Dissipation (PC) | 200 | mW | |
| Junction Temperature (TJ) | 150 | ||
| Storage Temperature (Tstg) | -55-150 | ||
| Switching Characteristics | Delay time (td) | 10 | nS |
| Rise time (tr) | 25 | nS | |
| Storage time (tS) | 225 | nS | |
| Fall time (tf) | 60 | nS | |
| Electrical Characteristics | Collector-base breakdown voltage (V(BR)CBO) | 75 | V |
| Collector-emitter breakdown voltage (V(BR)CEO) | 40 | V | |
| Emitter-base breakdown voltage (V(BR)EBO) | 6 | V | |
| Collector cut-off current (ICBO) | 10 | nA | |
| Collector cut-off current (ICEX) | 10 | nA | |
| DC Current Gain (hFE) | VCE=10V, IC= 0.1mA | 35 | |
| VCE=10V, IC= 1mA | 50 | ||
| VCE=10V, IC= 10mA | 75 | ||
| VCE=10V, IC= 150mA | 100-300 | ||
| VCE=10V, IC= 500mA | 40 | ||
| VCE=1V, IC= 150mA | 35 | ||
| Collector-emitter saturation voltage (VCE(sat)) | IC=150mA, IB= 15mA | 0.3 | V |
| IC=500mA, IB= 50mA | 1 | V | |
| Base-emitter saturation voltage (VBE(sat)) | IC=150mA, IB=15mA | 0.6-1.2 | V |
| IC=500mA, IB= 50mA | 2 | V | |
| Transition frequency (fT) | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz |
| Output Capacitance (Cob) | VCB=10V, IE=0,f=1MHz | 8 | pF |
| Input Capacitance (Cib) | VEB=0.5V,IC= 0,f=1MHz | 25 | pF |
| Noise Figure (NF) | VCE=10V, IC=100A, f=1KHz,Rs=1K | 4 | dB |
2410121456_CBI-MMDT2222ADW_C5362109.pdf
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