Compact Dual PNP Transistor CBI MMDT5401DW for Medium Power Amplification and Switching Applications
Key Attributes
Model Number:
MMDT5401DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Number:
2 PNP
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
MMDT5401DW
Package:
SOT-363
Product Description
Product Overview
This dual PNP transistor, complementary to the MMDT5551DW, is designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs. The device offers robust performance with high breakdown voltages and controlled current gain.
Product Attributes
- Type: Dual Transistor (PNP+PNP)
- Package: SOT-363 Plastic-Encapsulate Transistors
- Complementary to: MMDT5551DW
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -600 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -50 | nA | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 50 | |||
| VCE=-5V, IC=-10mA | 60 | |||||
| VCE=-5V, IC=-50mA | 50 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.5 | V | ||
| IC=-50mA, IB=-5mA | -0.2 | V | ||||
| IC=-10mA, IB=-1mA | -1 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -1 | V | ||
| IC=-50mA, IB=-5mA | -1 | V | ||||
| Transition frequency | fT | VCE=-10V,IC=-10mA , f=100MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 6 | pF | ||
2410121502_CBI-MMDT5401DW_C2919802.pdf
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