Trench DMOS N Channel MOSFET Bruckewell MSH100N055SB 100 Volt with Low RDS ON and Enhanced Switching
Key Attributes
Model Number:
MSH100N055SB
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-50℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
49pF
Number:
1 N-channel
Output Capacitance(Coss):
1.18nF
Input Capacitance(Ciss):
4.57nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
58.2nC@10V
Mfr. Part #:
MSH100N055SB
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH100N055SB is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide superior withstand capability in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switching, synchronous rectification, and quick chargers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Package Type: PDFN 5X6
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Features | ||||||
| RDS(ON) | VGS =10V | 5.5 | m | |||
| Fast switching | ||||||
| Improve dv/dt Capability | ||||||
| 100% EAS Guaranteed | ||||||
| Green Device Available | ||||||
| Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | +20/-12 | V | |||
| ID | Continuous Drain Current (TC =25C) | 70 | A | |||
| ID | Continuous Drain Current (TC =100C) | 44 | A | |||
| IDM | Pulsed Drain Current | 280 | A | |||
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 80 | A | |||
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 320 | mJ | |||
| PD | Power Dissipation (TC =25C) | 62.5 | W | |||
| PD | Power Dissipation (TA =25C) | 2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -50 | 150 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 60 | C/W | |||
| RJC | Maximum Junction-to-Case | 2 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.0 | 1.6 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 100 | - | - | V |
| gfs | Forward Transconductance | VDS =10V, ID =5A | - | 18 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | - | - | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =100V, VGS =0V, TJ =25C | - | - | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS =80V, VGS =0V, TJ =85C | - | - | 10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | - | 4.6 | 6.2 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =10A | - | 5.5 | 7.8 | m |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =40A | 80 | - | - | mJ |
| VSD | Diode Forward Voltage | IS =1A, VGS =0V, TJ =25C | - | - | 1.0 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current | - | - | 70 | A |
| ISM | Pulsed Source Current | - | - | 140 | A | |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V ID =10A VGS =10V | -- | 58.2 | -- | nC |
| Qgs | Gate-Source Charge | -- | 9.2 | -- | ||
| Qgd | Gate-Drain Charge | -- | 20.8 | -- | ||
| td(on) | Turn-On Delay Time | VDS =50V ID =1A VGS =10V RG =6 | -- | 24 | -- | ns |
| tr | Rise Time | -- | 19.8 | -- | ||
| td(off) | Turn-Off Delay Time | -- | 46 | -- | ||
| tf | Fall Time | -- | 26 | -- | ||
| CISS | Input Capacitance | VDS =25V VGS =0V f =1.0MHz | -- | 4570 | -- | pF |
| COSS | Output Capacitance | -- | 1180 | -- | ||
| CRSS | Reverse Transfer Capacitance | -- | 49 | -- | ||
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | -- | 2 | -- | |
2412061551_Bruckewell-MSH100N055SB_C42407730.pdf
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