High reliability PNP transistor CBI S8550 with 0.5A collector current and 0.2W power dissipation
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-523
Product Description
Product Overview
The S8550T is a PNP bipolar junction transistor designed as a complementary part to the S8050T. It features a continuous collector current of 0.5A and a collector power dissipation of 0.2W. This transistor is suitable for applications requiring a continuous collector current of up to 0.5A and is marked with '2TY'.
Product Attributes
- Type: PNP Transistor
- Marking: 2TY
- Complementary to: S8050T
- Package: SOT-523
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Units |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||
| VCBO | Collector-Base Voltage | -40 | V | |
| VCEO | Collector-Emitter Voltage | -25 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current -Continuous | -0.5 | A | |
| PC | Collector Power Dissipation | 0.2 | W | |
| Tj | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55-150 | ||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||
| V(BR)CBO | Collector-base breakdown voltage | IC = -100A, IE=0 | -40 | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC =-1mA, IB=0 | -25 | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE= -100A, IC=0 | -5 | V |
| ICBO | Collector cut-off current | VCB= -40V, IE=0 | -0.1 | A |
| ICEO | Collector cut-off current | VCE= -20V, IB=0 | -0.1 | A |
| IEBO | Emitter cut-off current | VEB= -3V, IC=0 | -0.1 | A |
| hFE(1) | DC current gain | VCE= -1V, IC= -50mA | 120 - 400 | |
| hFE(2) | DC current gain | VCE= -1V, IC= -500mA | 50 | |
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA, IB= -50mA | -0.6 | V |
| VBE(sat) | Base-emitter saturation voltage | IC=-500mA, IB= -50mA | -1.2 | V |
| fT | Transition frequency | VCE= -6V, IC= -20mA, f=30MHz | 150 | MHz |
| CLASSIFICATION OF hFE(1) | ||||
| Rank | Range | |||
| L | 120-200 | |||
| H | 200-350 | |||
| J | 300-400 | |||
| Pin 1 | BASE | |||
| Pin 2 | EMITTER | |||
| Pin 3 | COLLECTOR | |||
2410121238_CBI-S8550_C2836082.pdf
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