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quality Digital Transistor PNP CBI DTA143ZE Featuring Built in Bias Resistors for Reduced Parasitic Effects factory
quality Digital Transistor PNP CBI DTA143ZE Featuring Built in Bias Resistors for Reduced Parasitic Effects factory

Digital Transistor PNP CBI DTA143ZE Featuring Built in Bias Resistors for Reduced Parasitic Effects

Key Attributes
Model Number: DTA143ZE
Product Custom Attributes
Mfr. Part #:
DTA143ZE
Package:
SOT-523
Product Description

Product Overview

This Digital Transistor (PNP) features built-in bias resistors, simplifying inverter circuit configuration by eliminating the need for external input resistors. The thin-film resistors offer complete isolation for negative biasing and minimize parasitic effects, allowing for easy device design focused solely on on/off conditions. Ideal for applications requiring simplified digital circuit implementation.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Part Number MARKING Package Packing Method Pack Quantity
DTA143ZE E13 SOT-523 Reel 3000pcs/Reel
DTA143ZUA E13 SOT-323 Reel 3000pcs/Reel
DTA143ZKA E13 SOT-23-3L Reel 3000pcs/Reel
DTA143ZCA E13 SOT-23 Reel 3000pcs/Reel
Symbol Parameter Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCC Supply Voltage -50 V
VIN Input Voltage -30 +5 V
IO Output Current -100 mA
PD Power Dissipation 150 200 200 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
VI(off) Input voltage VCC=-5V, IO=-100A -0.5 V
VI(on) Input voltage VO=-0.3V, IO=-5mA -1.3 V
VO(on) Output voltage IO/II=-5mA/-0.25mA -0.3 V
II Input current VI=-5V -1.8 mA
IO(off) Output current VCC=-50V, VI=0 -0.5 A
GI DC current gain VO=-5V, IO=-10mA 80
R1 Input resistance 3.29 4.7 6.11
R2/R1 Resistance ratio 8 10 12
fT Transition frequency VO=-10V, IO=-5mA, f=100MHz 250 MHz
Symbol Parameter Conditions Value Unit
CO OUTPUT CAPACITANCE Ta=25, VR= -3V, f=1MHz 30 pF
CO OUTPUT CAPACITANCE Ta=25, VR= -30V, f=1MHz 3 pF
GI DC CURRENT GAIN Ta=25, VO=-5V, IO=-10mA 80
GI DC CURRENT GAIN Ta=100, VO=-5V, IO=-10mA 30
VO(ON) OUTPUT VOLTAGE Ta=25, IO/II=20, IO=-5mA -0.3 V
VO(ON) OUTPUT VOLTAGE Ta=100, IO/II=20, IO=-5mA -0.3 V
Parameter Conditions Value Unit
PD (DTA143ZE) Ta=25 150 mW
PD (DTA143ZUA/CA/KA) Ta=25 200 mW

2510101615_CBI-DTA143ZE_C51315332.pdf

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