Electronic Component CBI BC856C PNP Silicon Transistor in SOT23 Package for Amplifier and Switching
Key Attributes
Model Number:
BC856C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Number:
1 PNP
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC856C
Package:
SOT-23
Product Description
Product Overview
This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. Packaged in a SOT-23 plastic case, it offers reliable performance for various electronic circuits. Available in multiple models (BC856, BC857, BC858, BC859, BC860) with distinct characteristics, these transistors are suitable for general-purpose use.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Material: Silicon Epitaxial Transistor
Technical Specifications
| Parameter | Symbol | BC856 | BC857, BC860 | BC858, BC859 | Value | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| Collector Base Voltage | -VCBO | 80 | 50 | 30 | V | V | |
| Collector Emitter Voltage | -VCEO | 65 | 45 | 30 | V | V | |
| Emitter Base Voltage | -VEBO | 5 | V | ||||
| Collector Current | -IC | 100 | mA | ||||
| Peak Collector Current | -ICM | 200 | mA | ||||
| Power Dissipation | Ptot | 200 | mW | ||||
| Junction Temperature | Tj | 150 | C | ||||
| Storage Temperature Range | Tstg | -65 to +150 | C | ||||
| Characteristics at Ta = 25 C | |||||||
| DC Current Gain (at -VCE = 5 V, -IC = 2 mA) | hFE (Group A) | 110 | 220 | - | - | - | |
| DC Current Gain (at -VCE = 5 V, -IC = 2 mA) | hFE (Group B) | 200 | 450 | - | - | - | |
| DC Current Gain (at -VCE = 5 V, -IC = 2 mA) | hFE (Group C) | 420 | 800 | - | - | - | |
| Collector Base Cutoff Current (at -VCB = 30 V) | -ICBO | - | 15 | nA | |||
| Collector Base Breakdown Voltage (at -IC = 10 A) | -V(BR)CBO | 80 | 50 | 30 | - | V | |
| Collector Emitter Breakdown Voltage (at -IC = 10 A) | -V(BR)CES | 80 | 50 | 30 | - | V | |
| Collector Emitter Breakdown Voltage (at -IC = 10 mA) | -V(BR)CEO | 65 | 45 | 30 | - | V | |
| Emitter Base Breakdown Voltage (at -IE = 1 A) | -V(BR)EBO | 5 | - | V | |||
| Collector Emitter Saturation Voltage (at -IC = 10 mA, -IB = 0.5 mA) | -VCE(sat) | - | 0.3 | V | |||
| Collector Emitter Saturation Voltage (at -IC = 100 mA, -IB = 5 mA) | -VCE(sat) | - | 0.65 | V | |||
| Base Emitter On Voltage (at -IC = 2 mA, -VCE = 5 V) | -VBE(on) | 0.6 | - | V | |||
| Base Emitter On Voltage (at -IC = 10 mA, -VCE = 5 V) | -VBE(on) | - | 0.75 to 0.82 | V | |||
| Current Gain Bandwidth Product (at -VCE = 5 V, -IC = 10 mA, f = 100 MHz) | fT | 100 | - | MHz | |||
| Output Capacitance (at -VCB = 10 V, f = 1 MHz) | Cob | - | 6 | pF | |||
| Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz) | NF | 10 | 4 | 4 | - | dB | |
| Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz) | NF | - | - | 2 | - | dB | |
| MARKING CODE | TYPE | MARKING |
|---|---|---|
| 1 | 856A | 3A |
| 856B | 3B | |
| 856C | 3C | |
| 857A | 3E | |
| 857B | 3F | |
| 857C | 3G | |
| 858A | 3J | |
| 858B | 3K | |
| 858C | 3L | |
| 859A | 4A | |
| 859B | 4B | |
| 859C | 4C | |
| 860A | 4E | |
| 860B | 4F | |
| 860C | 4G |
| PACKAGE OUTLINE (SOT-23) | ||
|---|---|---|
| Symbol | Dimension in Millimeters (Min) | Dimension in Millimeters (Max) |
| A | 0.90 | 1.10 |
| A1 | 0.013 | 0.100 |
| B | 1.80 | 2.00 |
| bp | 0.35 | 0.50 |
| C | 0.09 | 0.150 |
| D | 2.80 | 3.00 |
| E | 1.20 | 1.40 |
| HE | 2.20 | 2.80 |
| Lp | 0.20 | 0.50 |
| 0 | 5 | |
2410121636_CBI-BC856C_C21714245.pdf
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