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quality High Breakdown Voltage NPN Transistor CBI MMBTA42 in SOT23 Plastic Package with Low Saturation Voltage factory
quality High Breakdown Voltage NPN Transistor CBI MMBTA42 in SOT23 Plastic Package with Low Saturation Voltage factory

High Breakdown Voltage NPN Transistor CBI MMBTA42 in SOT23 Plastic Package with Low Saturation Voltage

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features a high breakdown voltage and low collector-emitter saturation voltage. This transistor is complementary to the MMBTA92 (PNP) and is suitable for various applications requiring these characteristics.

Product Attributes

  • Package Type: SOT-23 Plastic-Encapsulated
  • Transistor Type: NPN
  • Marking Code: 1D
  • Complementary To: MMBTA92 (PNP)

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC= 1mA, IB=0 300 V
Emitter-Base Breakdown Voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector Cut-off Current ICBO VCB=200V, IE=0 0.25 A
Emitter Cut-off Current IEBO VEB= 5V, IC=0 0.1 A
DC Current Gain hFE(1) VCE= 10V, IC= 1mA 60
DC Current Gain hFE(2) VCE= 10V, IC=10mA 100 200
DC Current Gain hFE(3) VCE=10V, IC=30mA 60
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-Emitter Saturation Voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
Transition Frequency fT VCE= 20V, IC= 10mA, f=30MHz 50 MHz
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.3 A
Collector Power Dissipation PC 0.35 W
Thermal Resistance, Junction to Ambient RJA 357 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55~+150
Collector Current-Peak ICM 0.5 A

Package Outline

Plastic surface mounted package; 3 leads SOT-23

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR


2410121251_CBI-MMBTA42_C2828454.pdf

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