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quality P Channel 60 Volt Mosfet Bruckewell MSL60P03 Designed for Led Applications and Motor Control Systems factory
quality P Channel 60 Volt Mosfet Bruckewell MSL60P03 Designed for Led Applications and Motor Control Systems factory

P Channel 60 Volt Mosfet Bruckewell MSL60P03 Designed for Led Applications and Motor Control Systems

Key Attributes
Model Number: MSL60P03
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 P-Channel
Output Capacitance(Coss):
51pF
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.9nC@4.5V
Mfr. Part #:
MSL60P03
Package:
SOT-223
Product Description

Product Overview

The MSL60P03 is a high-performance P-Channel 60-V (D-S) MOSFET featuring a super high-density cell design. This design enables low RDS(ON) and reduced gate charge, making it ideal for high-efficiency fast switching applications. The device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is suitable for applications such as Motor Control, Net Working, and LED applications.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSL60P03
  • Channel Type: P-Channel
  • Voltage Rating: 60-V (D-S)
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: SOT-223

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage (unless otherwise specified) -60 - - V
VGS Gate-Source Voltage - - ±20 V
ID Continuous Drain Current1 (TA =25°C) - - -3.2 A
(TA =70°C) - - -2.5 A
IDM Pulsed Drain Current1,2 (TA =25°C) - - -12 A
PD Power Dissipation3 (TA =25°C) - - 2 W
TJ/TSTG Operating Junction and Storage Temperature -55 - +150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient1 - - 62.5 °C/W
Electrical Characteristics (TJ =25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =-250μA -1.0 - -2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250μA -60 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =-48V, VGS =0V, TJ =25°C - - -1 μA
VDS =-48V, VGS =0V, TJ =125°C - - -5 μA
RDS (on) Static Drain-Source On-Resistance2 VGS =-10V, ID =-2A - - 110 mΩ
VGS =-4.5V, ID =-1.5A - - 140 mΩ
VSD Diode Forward Voltage2 IS =-1.0A, VGS =0V, TJ =25°C - - -1.2 V
IS Continuous Source Current1,4 (Diode) VG =VD =0V, Force Current - - -3.2 A
Dynamic and Switching Characteristics
Qg Total Gate Charge2 VDS =-20V ID =-2A VGS =-4.5V - 5.9 - nC
Qgs Gate-Source Charge - 2.9 - nC
Qgd Gate-Drain Charge - 1.8 - nC
td(on) Turn-On Delay Time2 VDD =-12V ID =-1A VGS =-10V RG =3.3Ω - 10 - ns
tr Rise Time - 17 - ns
td(off) Turn-Off Delay Time - 22 - ns
tf Fall Time - 21 - ns
CISS Input Capacitance VDS =-15V VGS =0V f =1.0MHz - 715 - pF
COSS Output Capacitance - 51 - pF
CRSS Reverse Transfer Capacitance - 34 - pF
Package Dimensions (Millimeter)
REF Min. Max. REF Min. Max.
A 6.70 7.30 1 6.30 6.80
C 2.90 3.10 2 6.30 6.80
D 0.02 0.10 3 3.30 3.70
E 0° 10° 4 3.30 3.70
I 0.60 0.80 5 1.40 1.80
H 0.25 0.35 6 1.50 1.80
B 13° Typ. 7 1.55 1.95
J 2.30 Ref. 8 0.80 1.10
Packing & Order Information
Packing 2,500/Reel
Marking MSL60P03

Notes:
1 Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3 The power dissipation is limited by 150°C junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2412061551_Bruckewell-MSL60P03_C42407746.pdf

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