Trench DMOS N Channel MOSFET Bruckewell MSH80N030 with Enhanced Avalanche and Commutation Protection
Key Attributes
Model Number:
MSH80N030
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
RDS(on):
3.7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
220W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
MSH80N030
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH80N030 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include networking, load switching, synchronous rectification, and quick chargers.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Channel Type: N-Channel
- Certifications: RoHS Compliant, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Model | MSH80N030 | |
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (TC =25°C) | 100 | A |
| Continuous Drain Current (TC =100°C) | 99 | A |
| Pulsed Drain Current (IDM) | 400 | A |
| Single Pulse Avalanche Current (IAS, L=0.1mH) | 75 | A |
| Single Pulse Avalanche Energy (EAS, L=0.1mH) | 281 | mJ |
| Power Dissipation (PD, TC =25°C) | 220 | W |
| Operating Junction and Storage Temperature | -55 to 150 | °C |
| RDS(ON) @ VGS =10V, ID =20A | 3.0 | mΩ |
| RDS(ON) @ VGS =4.5V, ID =10A | 3.7 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.8 | V |
| Drain-Source Breakdown Voltage (BVDSS) | 80 | V |
| Gate-Source Leakage Current (IGSS) | ±100 | nA |
| Drain-Source Leakage Current (IDSS) | 1 | μA |
| Total Gate Charge (Qg) | 104 | nC |
| Input Capacitance (CISS) | 6286 | pF |
| Output Capacitance (COSS) | 1108 | pF |
| Reverse Transfer Capacitance (CRSS) | 50 | pF |
| Package Type | PDFN 5X6 | |
| Package Dimension (E) | 5.70 - 5.90 | mm |
| Package Dimension (H) | 5.90 - 6.20 | mm |
| Package Dimension (K) | 3.70 - 4.10 | mm |
| Package Dimension (D) | 4.80 - 5.00 | mm |
| Package Dimension (E2) | 3.50 Ref. | |
| Package Dimension (L1) | 0.06 - 0.20 | mm |
| Packing | 3,000/Reel | |
| Marking | 80N030 |
2412061551_Bruckewell-MSH80N030_C42407741.pdf
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