Plastic encapsulated transistor model CBI 2SD1005 offering high breakdown voltage and consistent gain

Key Attributes
Model Number: 2SD1005
Product Custom Attributes
Mfr. Part #:
2SD1005
Package:
SOT-89
Product Description

Product Overview

This NPN plastic-encapsulated transistor features a small flat package, high breakdown voltage, and excellent DC current gain linearity. It is suitable for applications requiring reliable performance and consistent gain characteristics.

Product Attributes

  • Brand: Not explicitly mentioned, but associated with Heyuan China Base Electronics Technology Co., Ltd.
  • Origin: China

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain (hFE(1)) hFE(1) VCE=2V, IC=100mA 90 400
DC current gain (hFE(2)) hFE(2) VCE=2V, IC=500mA 25
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.5 V
Base-emitter voltage VBE VCE=10V, IC=10mA 0.6 0.7 V
Transition frequency fT VCE=5V,IC=10mA 160 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 12 pF
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Collector Power Dissipation PC 500 mW
Thermal Resistance Junction To Ambient RJA 250 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
CLASSIFICATION OF hFE(1) MARKING RANGE
W BW 90180
V BV 135270
U BU 200400

2510101615_CBI-2SD1005_C51315077.pdf

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