60 Volt P Channel MOSFET Bruckewell MS23P11B featuring low gate charge and excellent RDS ON for load switching

Name: 60 Volt P Channel MOSFET Bruckewell MS23P11B featuring low gate charge and excellent RDS ON for load switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MS23P11B
Availability: InStock

Key Attributes

Model Number: MS23P11B

Product Custom Attributes

Configuration:

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

1.7A

Operating Temperature -:

-55℃~+150℃

RDS(on):

266mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

38pF

Number:

1 P-Channel

Output Capacitance(Coss):

59pF

Input Capacitance(Ciss):

531pF

Pd - Power Dissipation:

Gate Charge(Qg):

4.6nC@4.5V

Mfr. Part #:

MS23P11B

Package:

SOT-23

Product Description

Product Overview

The MS23P11B is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include its advanced high cell density trench technology, super low gate charge, and excellent CdV/dt effect decline. It is available as a Green Device.

Product Attributes

Brand: Bruckewell Technology Corporation
Product Type: P-Channel MOSFET
Voltage Rating: 60-V (D-S)
Certifications: RoHS Compliant, Green Device Available

Technical Specifications

Model: MS23P11B

Package Type: SOT-23

Packing: 3,000/Reel

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage				-60	V
VGS	Gate-Source Voltage				20	V
ID	Continuous Drain Current¹	(TA =25C)			-1.7	A
ID	Continuous Drain Current¹	(TA =70C)			-1.4	A
IDM	Pulsed Drain Current²	(TA =25C)			-7	A
PD	Power Dissipation³	(TA =25C)			1.0	W
TJ/TSTG	Operating Junction and Storage Temperature		-55		+150	C
Thermal Resistance Ratings
RJA	Maximum Junction-to-Ambient¹				125	C/W
Electrical Characteristics (TJ =25C unless otherwise specified)
VGS (th)	Gate Threshold Voltage	VDS =VGS, ID =-250A	-1.0		-2.5	V
BVDSS	Drain-Source Breakdown Voltage	VGS =0V, ID =-250A	-60			V
gfs	Forward Transconductance	VDS =-5V, ID =-1.5A		5.9		S
IGSS	Gate-Source Leakage Current	VDS =0V, VGS =20V			100	nA
IDSS	Drain-Source Leakage Current	VDS =-48V, VGS =0V, TJ =25C			-1	A
IDSS	Drain-Source Leakage Current	VDS =-48V, VGS =0V, TJ =55C			-5	A
RDS (on)	Static Drain-Source On-Resistance²	VGS =-10V, ID =-1.5A			180	m
RDS (on)	Static Drain-Source On-Resistance²	VGS =-4.5V, ID =-1.0A			266	m
VSD	Diode Forward Voltage²	IS =-1.0A, VGS =0V, TJ =25C			-1.2	V
IS	Continuous Source Current^1,4 (Diode)	VG =VD =0V, Force Current			-1.7	A
ISM	Pulsed Source Current^2,4 (Diode)				-7	A
Dynamic and Switching Characteristics
Qg	Total Gate Charge²	VDS =-20V ID =-1.5A VGS =-4.5V		4.6		nC
Qgs	Gate-Source Charge			1.4		nC
Qgd	Gate-Drain Charge			1.62		nC
td(on)	Turn-On Delay Time²	VDS =-15V ID =-1A VGS =-10V RG =3.3		17.4		ns
tr	Rise Time			5.4		ns
td(off)	Turn-Off Delay Time			37.2		ns
tf	Fall Time			2.4		ns
CISS	Input Capacitance	VDS =-15V VGS =0V f =1.0MHz		531		pF
COSS	Output Capacitance			59		pF
CRSS	Reverse Transfer Capacitance			38		pF

Notes:

1. Surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Typical Applications:

Motor Drive
Power Tools
LED Applications

2412061551_Bruckewell-MS23P11B_C42407719.pdf

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