P Channel MOSFET Bruckewell MS60P03 60V with low reverse transfer capacitance and fast switching
Key Attributes
Model Number:
MS60P03
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
200mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF
Output Capacitance(Coss):
51pF
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.9nC@4.5V
Mfr. Part #:
MS60P03
Package:
SOT-23
Product Description
Product Overview
The MS60P03 is a high-performance P-Channel 60V MOSFET designed for high efficiency and fast switching applications. Featuring a super high-density cell design for low RDS(ON) and reduced gate charge, this device is ideal for motor control, networking, and LED applications. It meets RoHS and Green Product requirements and offers improved dv/dt capability and low reverse transfer capacitance.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Series: MS60P03
- Channel Type: P-Channel
- Voltage Rating: 60V (Drain-Source)
- Package Type: SOT-23
- Certifications: RoHS Compliant, Green Device Available
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current (TA =25C) | -3 | A | |||
| ID | Continuous Drain Current (TA =70C) | -2.3 | A | |||
| IDM | Pulsed Drain Current (TA =25C) | -12 | A | |||
| PD | Power Dissipation (TA =25C) | 2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | C | ||
| Thermal Resistance Ratings | ||||||
| RJA | Maximum Junction-to-Ambient | 125 | C/W | |||
| RJC | Maximum Junction-to-Case | 80 | C/W | |||
| Electrical Characteristics (TJ =25C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250A | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250A | -60 | V | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-48V, VGS =0V, TJ =25C | -1 | A | ||
| IDSS | Drain-Source Leakage Current | VDS =-48V, VGS =0V, TJ =125C | -5 | A | ||
| RDS (on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-2A | 120 | 140 | m | |
| RDS (on) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-1.5A | 150 | 200 | m | |
| VSD | Diode Forward Voltage | IS =-1.0A, VGS =0V, TJ =25C | -1.2 | V | ||
| IS | Continuous Source Current (Diode) | VG =VD =0V, Force Current | -3.2 | A | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS =-20V ID =-2A VGS =-4.5V | 5.9 | nC | ||
| Qgs | Gate-Source Charge | 2.9 | nC | |||
| Qgd | Gate-Drain Charge | 1.8 | nC | |||
| td(on) | Turn-On Delay Time | VDD =-12V ID =-1A VGS =-10V RG =3.3 | 10 | ns | ||
| tr | Rise Time | 17 | ns | |||
| td(off) | Turn-Off Delay Time | 22 | ns | |||
| tf | Fall Time | 21 | ns | |||
| CISS | Input Capacitance | VDS =-15V VGS =0V f =1.0MHz | 715 | pF | ||
| COSS | Output Capacitance | 51 | pF | |||
| CRSS | Reverse Transfer Capacitance | 34 | pF | |||
2410121535_Bruckewell-MS60P03_C22465592.pdf
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