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quality Compact SOT363 package dual NPN transistor CBI MMDT4401DW ideal for electronic circuit amplification factory
quality Compact SOT363 package dual NPN transistor CBI MMDT4401DW ideal for electronic circuit amplification factory

Compact SOT363 package dual NPN transistor CBI MMDT4401DW ideal for electronic circuit amplification

Key Attributes
Model Number: MMDT4401DW
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Number:
2 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT4401DW
Package:
SOT-363
Product Description

Product Overview

This NPN epitaxial planar die construction transistor is ideal for low power amplification and switching applications. It is a dual transistor package featuring two NPN transistors in a single SOT-363 package, designed for efficient performance in various electronic circuits.

Product Attributes

  • Construction: Epitaxial Planar Die
  • Package Type: SOT-363
  • Transistor Type: NPN + NPN (Dual Transistor)
  • Encapsulation: Plastic
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Conditions Value Units
Maximum Ratings (Ta = 25 unless otherwise specified)
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.6 A
Collector Power Dissipation PC 0.2 W
Thermal Resistance from Junction to Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55 to +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 6 V
Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A
Collector cut-off current ICEO VCE= 35 V , IB=0 0.5 A
Emitter cut-off current IEBO VEB=5V , IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC= 0.1mA 20
DC current gain hFE(2) VCE=1V, IC= 1mA 40
DC current gain hFE(3) VCE=1V, IC= 10mA 80
DC current gain hFE(4) VCE=1V, IC= 150mA 100-300
DC current gain hFE(5) VCE=2V, IC= 500mA 40
Collector-emitter saturation voltage VCE(sat)1 IC=150 mA, IB=15mA 0.4 V
Collector-emitter saturation voltage VCE(sat)2 IC=500 mA, IB=50mA 0.75 V
Base-emitter saturation voltage VBE(sat)1 IC=150 mA, IB=15mA 0.75-0.95 V
Base-emitter saturation voltage VBE(sat)2 IC=500 mA, IB=50mA 1.2 V
Transition frequency fT VCE=10V,IC=20mA,f=100MHz 250 MHz
Output capacitance Cob VCB=5V, IE=0,f=1MHz 6.5 pF
Delay time td 15 nS
Rise time tr VCC=30V, VBE=2V,IC=150mA ,IB1=15mA 20 nS
Storage time tS 225 nS
Fall time tf VCC=30V, IC=150mA,IB1=-IB2=15mA 30 nS

2410121642_CBI-MMDT4401DW_C5362111.pdf

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