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quality 100 Volt N Channel MOSFET Bruckewell MSH100N020D Featuring Low RDS ON and RoHS Compliant Green Device factory
quality 100 Volt N Channel MOSFET Bruckewell MSH100N020D Featuring Low RDS ON and RoHS Compliant Green Device factory

100 Volt N Channel MOSFET Bruckewell MSH100N020D Featuring Low RDS ON and RoHS Compliant Green Device

Key Attributes
Model Number: MSH100N020D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
28.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
185pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
849pF
Gate Charge(Qg):
17.9nC@10V
Mfr. Part #:
MSH100N020D
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MSH100N020D is a high-performance N-Channel 100-V (D-S) MOSFET from Bruckewell Technology Corporation. Engineered with extreme high cell density, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSH
  • Channel Type: N-Channel
  • Voltage Rating: 100-V (D-S)
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: PDFN 5X6 Dual
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25°C) 28.5 A
ID Continuous Drain Current (TC =100°C) 20 A
IDM Pulsed Drain Current1,2 90 A
IAS Single Pulse Avalanche Current, L =0.1mH3 30 A
EAS Single Pulse Avalanche Energy, L =0.1mH3 45 mJ
PD Power Dissipation4 (TC =25°C) 30 W
PD Power Dissipation4 (TA =25°C) 2 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient1 62.5 °C/W
RθJC Maximum Junction-to-Case1 4.2 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250µA 1.0 1.7 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250µA 100 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =80V, VGS =0V, TJ =25°C
VDS =80V, VGS =0V, TJ =55°C		 - - 1
5		 µA
RDS (on) Static Drain-Source On-Resistance2 VGS =10V, ID =10A - 16.5 19.5 mΩ
VGS =4.5V, ID =10A - 22 29 mΩ
EAS Single Pulse Avalanche Energy5 VDD =25V, L =0.1mH, IAS =22A 24 - - mJ
VSD Diode Forward Voltage2 IS =10A, VGS =0V, TJ =25°C - - 1.2 V
IS Continuous Source Current1,6 - - 28.5 A
ISM Pulsed Source Current2,6 VG =VD =0V, Force Current - - 60 A
Dynamic Characteristics
Qg Total Gate Charge2 - 17.9 - nC
Qgs Gate-Source Charge - 2.8 - nC
Qgd Gate-Drain (“Miller”) Charge VDS =50V, ID =10A, VGS =10V - 5.1 - nC
td(on) Turn-On Delay Time2 - 13 - ns
tr Rise Time - 6 - ns
td(off) Turn-Off Delay Time - 30 - ns
tf Fall Time VDS =30V, ID =1A, VGS =10V, RG =6Ω - 29 - ns
CISS Input Capacitance VDS =50V, VGS =0V, f =1.0MHz - 849 - pF
COSS Output Capacitance VDS =50V, VGS =0V, f =1.0MHz - 185 - pF
CRSS Reverse Transfer Capacitance VDS =50V, VGS =0V, f =1.0MHz - 8 - pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz - 0.8 - Ω

Notes:

  • 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
  • 4. The power dissipation is limited by 150°C junction temperature.
  • 5. The Min. value is 100% EAS tested guarantee.
  • 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2412061551_Bruckewell-MSH100N020D_C42407729.pdf

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