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quality PNP Silicon Epitaxial Planar Transistor CBI MPSA94U for in High Voltage Electronic Amplifier Circuits factory
quality PNP Silicon Epitaxial Planar Transistor CBI MPSA94U for in High Voltage Electronic Amplifier Circuits factory

PNP Silicon Epitaxial Planar Transistor CBI MPSA94U for in High Voltage Electronic Amplifier Circuits

Key Attributes
Model Number: MPSA94U
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
625mW
Type:
PNP
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
MPSA94U
Package:
SOT-89
Product Description

Product Overview

This PNP Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers robust performance with a high collector-emitter voltage rating and is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-89

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO 400 V
Collector Emitter Voltage -VCEO 400 V
Emitter Base Voltage -VEBO 6 V
Collector Current -IC 300 mA
Total Power Dissipation Ptot 625 mW
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain hFE 70 - -VCE = 10 V, -IC = 1 mA
DC Current Gain hFE 80 - -VCE = 10 V, -IC = 10 mA
DC Current Gain hFE 70 - -VCE = 10 V, -IC = 50 mA
DC Current Gain hFE 60 - -VCE = 10 V, -IC = 100 mA
Collector Base Cutoff Current -ICBO - 0.1 A -VCB = 300 V
Collector Emitter Cutoff Current -ICES - 1 A -VCE = 400 V
Emitter Base Cutoff Current -IEBO - 0.1 A -VEB = 4 V
Collector Base Breakdown Voltage -V(BR)CBO 400 V -IC = 100 A
Collector Emitter Breakdown Voltage -V(BR)CEO 400 V -IC = 1 mA
Emitter Base Breakdown Voltage -V(BR)EBO 6 V -IE = 10 A
Collector Emitter Saturation Voltage -VCE(sat) - 0.2 V -IC = 10 mA, -IB = 1 mA
Collector Emitter Saturation Voltage -VCE(sat) - 0.5 V -IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage -VBE(sat) - 0.75 V -IC = 10 mA, -IB = 1 mA
Collector Output Capacitance Cob - 7 pF -VCB = 20 V, f = 1 MHz

2410121516_CBI-MPSA94U_C5362128.pdf

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