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quality NPN transistor CBI MMBT5551W medium power amplification switching applications surface mount package factory
quality NPN transistor CBI MMBT5551W medium power amplification switching applications surface mount package factory

NPN transistor CBI MMBT5551W medium power amplification switching applications surface mount package

Key Attributes
Model Number: MMBT5551W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551W
Package:
SOT-323
Product Description

Product Overview

This NPN transistor is designed for medium power amplification and switching applications. It features a small surface mount package and is complementary to the MMST5401. Its robust design ensures reliable performance in various electronic circuits.

Product Attributes

  • Marking: G1
  • Package Type: SOT323
  • Material: Plastic-Encapsulate Transistors
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 50 nA
Emitter cut-off current IEBO VEB=4V, IC=0 50 nA
DC current gain hFE VCE=5V, IC=1mA 80
VCE=5V, IC=10mA 80 300
VCE=5V, IC=50mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.2 V
IC=10mA, IB=1mA 0.15 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V
IC=10mA, IB=1mA 1 V
Transition frequency fT VCE=10V,IC=10mA , f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
*Pulse test: pulse width 300s, duty cycle 2.0%.
SOT-323 Package Outline Dimensions (Unit: Millimeters)
Symbol Dimension Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2410281115_CBI-MMBT5551W_C5362106.pdf

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