86--136 6733 2386
quality Plastic Encapsulated Dual PNP Transistor CBI BC857BV with Epitaxial Die Construction SOT563 Package factory
quality Plastic Encapsulated Dual PNP Transistor CBI BC857BV with Epitaxial Die Construction SOT563 Package factory

Plastic Encapsulated Dual PNP Transistor CBI BC857BV with Epitaxial Die Construction SOT563 Package

Key Attributes
Model Number: BC857BV
Product Custom Attributes
Mfr. Part #:
BC857BV
Package:
SOT-563
Product Description

Product Overview

The BC857BV is a plastic-encapsulated dual PNP transistor featuring epitaxial die construction and an ultra-small surface mount package. Complementary NPN types are available. This transistor is designed for various electronic applications requiring reliable PNP amplification and switching.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Dual Transistor (PNP+PNP)
  • Package Type: SOT-563
  • Marking Code: K5V

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Units
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.1 A
Collector Power Dissipation PC 0.15 W
Thermal Resistance from Junction to Ambient RJA 833 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-1A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA
DC current gain hFE VCE=-5V,IC=-2mA 220 475
Collector-emitter saturation voltage VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.1 V
Collector-emitter saturation voltage VCE(sat)(2) IC=-100mA,IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat)(1) IC=-10mA,IB=-0.5mA -0.7 V
Base-emitter saturation voltage VBE(sat)(2) IC=-100mA,IB=-5mA -0.9 V
Base-emitter voltage VBE(1) VCE=-5V,IC=-2mA -0.75 V
Base-emitter voltage VBE(2) VCE=-5V,IC=-10mA -0.82 V
Transition frequency fT VCE=-5V,IC=-10mA,f=100MHz 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF
Noise figure NF VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz 10 dB

2510101615_CBI-BC857BV_C51315149.pdf

Related Products
quality power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW factory
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification factory
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.