Surface Mount High Voltage Silicon Epitaxial Planar Diode CBI BAS21DW for Electronic Applications

Key Attributes
Model Number: BAS21DW
Product Custom Attributes
Mfr. Part #:
BAS21DW
Package:
SOT-363
Product Description

Product Overview

This product line features Silicon Epitaxial Planar Diodes designed for high-voltage switching applications. With fast switching speeds and a surface mount package ideal for automatic insertion, these diodes are suitable for various electronic designs requiring efficient and reliable high-voltage rectification. The series offers different voltage ratings to accommodate diverse application needs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Silicon Epitaxial Planar Diodes
  • Package: Surface mount

Technical Specifications

Parameter Symbol BAS19DW BAS20DW BAS21DW Unit
Absolute Maximum Ratings (Ta = 25 C)
Repetitive Peak Reverse Voltage VRRM 120 200 250 V
Reverse Voltage VR 100 150 200 V
Average Rectified Forward Current IF(AV) 200 mA
Forward Continuous Current IFM 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (at t = 1 ms) IFSM 2.5 A
Non-repetitive Peak Forward Surge Current (at t = 1 s) IFSM 0.5 A
Power Dissipation Pd 250 mW
Operating and Storage Temperature Range Tj, Tstg -65 to +150 C
Characteristics (at Ta = 25 C)
Forward Voltage (at IF = 100 mA) VF - 1 V
Forward Voltage (at IF = 200 mA) VF - 1.25 V
Reverse Breakdown Voltage (at IR = 100 A) V(BR)R 120 200 250 V
Reverse Current (at VR = 100 V) IR - - 100 nA
Reverse Current (at VR = 150 V) IR - 100 - nA
Reverse Current (at VR = 200 V) IR 100 - - nA
Total Capacitance (at VR = 0, f = 1 MHz) CT - 5 pF
Reverse Recovery Time (at IF = 30 mA, IRR = 0.1IR, RL = 100 ) trr - 50 ns
MARKING JP JR JS

2510131755_CBI-BAS21DW_C51822180.pdf

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