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quality General Purpose NPN Transistor CBI SS8050 with SOT89 Package and 0.5 Watt Collector Power Dissipation factory
quality General Purpose NPN Transistor CBI SS8050 with SOT89 Package and 0.5 Watt Collector Power Dissipation factory

General Purpose NPN Transistor CBI SS8050 with SOT89 Package and 0.5 Watt Collector Power Dissipation

Key Attributes
Model Number: SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050
Package:
SOT-89
Product Description

Product Overview

The SS8050 is a plastic-encapsulated NPN transistor designed for general-purpose applications. It serves as a compliment to the SS8550 transistor. Key features include a continuous collector current of 1.5 A and a collector power dissipation of 0.5 W. This transistor is suitable for various electronic circuits requiring amplification and switching functionalities.

Product Attributes

  • Type: NPN Transistor
  • Package: SOT-89
  • Marking: Y1
  • Complementary Device: SS8550

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1.5 A
Collector Power Dissipation PC 0.5 W
Thermal Resistance (Junction to Ambient) RJA 250 /W
Storage Temperature TJ / Tstg -55 150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Emitter cut-off current ICEO VCE=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=100mA 120 400
DC current gain hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF

Classification of hFE(1)

Rank Range
C 120-200
D 160-300
D1 200-350
D2 300-400

2409302232_CBI-SS8050_C2836478.pdf

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