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quality Epitaxial Planar Die Plastic Encapsulated Transistor CBI MMDT9014DW Medium Power Amplification Device factory
quality Epitaxial Planar Die Plastic Encapsulated Transistor CBI MMDT9014DW Medium Power Amplification Device factory

Epitaxial Planar Die Plastic Encapsulated Transistor CBI MMDT9014DW Medium Power Amplification Device

Key Attributes
Model Number: MMDT9014DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Number:
2 NPN
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
MMDT9014DW
Package:
SOT-363
Product Description

Product Overview

This plastic-encapsulated transistor features an epitaxial planar die construction and is ideal for medium power amplification and switching applications. A complementary PNP type, MMDT9015, is also available. The TGL6 is the marking for this transistor.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Plastic-Encapsulated Transistor
  • Construction: Epitaxial Planar Die
  • Marking: TGL6
  • Complementary PNP Type: MMDT9015
  • Package: SOT-363

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 0.1 A
Collector Power Dissipation PC 0.2 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=100A, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 A
Collector cut-off current ICEO VCE=35V, IB=0 1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 A
DC current gain hFE VCE=5V, IC=1mA 300 400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V
Base-emitter voltage VBE VCE=5V,IC=2mA 0.58 0.7 V
Transition frequency fT VCE=5V,IC=10mA, f=30MHz 150 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF
Noise Figure NF VCE=5V, IC=0.2mA, Rg=2k,f=1kHz 10 dB

2410121531_CBI-MMDT9014DW_C2919789.pdf

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