SOT23 Package PNP Silicon Epitaxial Transistor CBI BC860C Designed for Amplifier Circuit Integration

Name: SOT23 Package PNP Silicon Epitaxial Transistor CBI BC860C Designed for Amplifier Circuit Integration
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC860C
Availability: InStock

Key Attributes

Model Number: BC860C

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

15nA

Pd - Power Dissipation:

200mW

Transition Frequency(fT):

100MHz

Type:

PNP

Current - Collector(Ic):

100mA

Collector - Emitter Voltage VCEO:

45V

Mfr. Part #:

BC860C

Package:

SOT-23

Product Description

Product Overview

This product is a PNP Silicon Epitaxial Transistor designed for switching and amplifier applications. It is housed in a SOT-23 plastic package, offering a reliable component for various electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C)

Parameter	Symbol	BC856	BC857, BC860	BC858, BC859	Unit
Collector Base Voltage	-VCBO	80	50	30	V
Collector Emitter Voltage	-VCEO	65	45	30	V
Emitter Base Voltage	-VEBO	5			V
Collector Current	-IC	100			mA
Peak Collector Current	-ICM	200			mA
Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			C
Storage Temperature Range	Tstg	-65 to +150			C

Characteristics at Ta = 25 C

Parameter	Symbol	Min.	Max.	Unit
DC Current Gain at -VCE = 5 V, -IC = 2 mA (Current Gain Group)	hFE (A)	110	220	-
	hFE (B)	200	450	-
	hFE (C)	420	800	-
Collector Base Cutoff Current at -VCB = 30 V	-ICBO	-	15	nA
Collector Base Breakdown Voltage at -IC = 10 A	-V(BR)CBO (BC856)	80	-	V
	-V(BR)CBO (BC857, BC860)	50	-	V
	-V(BR)CBO (BC858, BC859)	30	-	V
Collector Emitter Breakdown Voltage at -IC = 10 A	-V(BR)CES (BC856)	80	-	V
	-V(BR)CES (BC857, BC860)	50	-	V
	-V(BR)CES (BC858, BC859)	30	-	V
Collector Emitter Breakdown Voltage at -IC = 10 mA	-V(BR)CEO (BC856)	65	-	V
	-V(BR)CEO (BC857, BC860)	45	-	V
	-V(BR)CEO (BC858, BC859)	30	-	V
Emitter Base Breakdown Voltage at -IE = 1 A	-V(BR)EBO	5	-	V
Collector Emitter Saturation Voltage	at -IC = 10 mA, -IB = 0.5 mA	-	0.3	V
Collector Emitter Saturation Voltage	at -IC = 100 mA, -IB = 5 mA	-	0.65	V
Base Emitter On Voltage at -VCE = 5 V	at -IC = 2 mA	0.6	-	V
Base Emitter On Voltage at -VCE = 5 V	at -IC = 10 mA	0.75	0.82	V
Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz	fT	100	-	MHz
Output Capacitance at -VCB = 10 V, f = 1 MHz	Cob	-	6	pF
Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz	BC856, BC857, BC858	-	4	dB
	BC859, BC860	-	4	dB
Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz	BC860	-	2	dB

Pin Identification

1. BASE
2. EMITTER
3. COLLECTOR

Marking Code

TYPE	MARKING	TYPE	MARKING
856A	3A	859B	4A
856B	3B	859C	4B
856C	3C	860A	4C
857A	3E	860B	4E
857B	3F	860C	4F
857C	3G
858A	3J
858B	3K
858C	3L
859A

Package Outline (SOT-23)

Symbol	Min	Max
A	0.90	1.10
A1	0.013	0.100
B	1.80	2.00
bp	0.35	0.50
C	0.09	0.150
D	2.80	3.00
E	1.20	1.40
HE	2.20	2.80
Lp	0.20	0.50
	0	5

2410121636_CBI-BC860C_C21714248.pdf

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