Small package silicon epitaxial planar diode CBI 1SS181 with fast reverse recovery time and low forward voltage
Key Attributes
Model Number:
1SS181
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Common Anode
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS181
Package:
SOT-23
Product Description
Product Overview
The 1SS181 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.
Product Attributes
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23 Plastic Package
- Marking Code: A1
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||
| Maximum Peak Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Average Rectified Forward Current | IF(AV) | 100 | mA |
| Maximum Peak Forward Current | IFM | 300 | mA |
| Non-repetitive Peak Forward Surge Current (10 ms) | IFSM | 2 | A |
| Power Dissipation | Ptot | 350 | mW |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | Tstg | -55 to +150 | C |
| Characteristics at Ta = 25 C | |||
| Forward Voltage at IF = 100 mA | VF | 1.2 | V |
| Reverse Current at VR = 30 V | IR | 0.1 | A |
| Reverse Current at VR = 80 V | IR | 0.5 | A |
| Total Capacitance at VR = 0 , f = 1 MHz | CT | 4 | pF |
| Reverse Recovery Time at IF = 10 mA | trr | 4 | ns |
Package Outline: Plastic surface mounted package; 3 leads SOT-23.
2410121242_CBI-1SS181_C2836096.pdf
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