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quality General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC847BW Suitable for Switching Circuits factory
quality General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC847BW Suitable for Switching Circuits factory

General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC847BW Suitable for Switching Circuits

Key Attributes
Model Number: BC847BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847BW
Package:
SOT-323
Product Description

Product Overview

The BC846W to BC850W series are NPN silicon epitaxial planar transistors designed for general purpose and switching applications. These transistors offer a range of voltage and current ratings suitable for various electronic circuits.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: General purpose and switching applications

Technical Specifications

Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 30 50 V
Collector Emitter Voltage VCEO 65 45 30 30 45 V
Emitter Base Voltage VEBO 6 6 5 5 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics at Ta = 25 C
DC Current Gain (VCE = 5 V, IC = 2 mA) hFE (A) 110-220 110-220 110-220 110-220 110-220 -
hFE (B) 200-450 200-450 200-450 200-450 200-450 -
hFE (C) 420-800 420-800 420-800 420-800 420-800 -
Collector Base Voltage (IC = 10 A) VCBO 80 50 30 30 50 V
Collector Emitter Voltage (IC = 10 mA) VCEO 65 45 30 30 45 V
Emitter Base Voltage (IE = 1 A) VEBO 6 6 5 5 5 V
Collector Base Cutoff Current (VCB = 30 V) ICBO 15 nA
Emitter Base Cutoff Current (VEB = 5 V) IEBO 100 nA
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 V
(IC = 100 mA, IB = 5 mA) VCE(sat) 0.6 V
Base Emitter Voltage (VCE = 5 V, IC = 2 mA) VBE 0.58 V
(VCE = 5 V, IC = 10 mA) VBE 0.7 V
Base Emitter Voltage (VCE = 5 V, IC = 10 mA) VBE 0.77 V
Transition Frequency (VCE = 5 V, IC = 10 mA, f = 100 MHz) fT 100 MHz
Collector Output Capacitance (VCB = 10 V, IE = 0, f = 1 MHz) Cob 4.5 pF
DEVICE MARKING
BC846AW 1A BC847AW 1E
BC846BW 1B BC847BW 1F
BC846CW 1C BC847CW 1G
BC848AW 1J BC849AW 1E
BC848BW 1K BC849BW 1F
BC848CW 1L BC849CW 1G
BC850AW 1E BC850BW 1F
BC850CW 1G
SOT-323 Package Outline Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.100 0.035 - 0.043
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.000 0.035 - 0.039
b 0.200 - 0.400 0.008 - 0.016
c 0.080 - 0.150 0.003 - 0.006
D 2.000 - 2.200 0.079 - 0.087
E 1.150 - 1.350 0.045 - 0.053
E1 2.150 - 2.450 0.085 - 0.096
e 1.200 TYP. 0.047 TYP.
e1 0.650 TYP. 0.026 TYP.
L 0.260 - 0.460 0.010 - 0.018
L1 0.525 REF. 0.021 REF.
0 - 8 0 - 8

2410121236_CBI-BC847BW_C2836072.pdf

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