NPN transistor CBI C1815 featuring SOT23 package ideal for switching and amplification applications

Key Attributes
Model Number: C1815
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
C1815
Package:
SOT-23
Product Description

Product Overview

The C1815 is an NPN bipolar junction transistor designed for general-purpose applications. It features a power dissipation capability and is marked with 'HF'. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

  • Type: NPN Transistor
  • Marking: HF
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter Symbol Test Conditions Value Units
Maximum Ratings (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 150 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICEO VCE=50V, IB=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE VCE=6V, IC=2mA 200 - 400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=10V, IC=1mA, f=30MHz 80 MHz

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR


2410121222_CBI-C1815_C2828450.pdf

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