NPN transistor CBI C1815 featuring SOT23 package ideal for switching and amplification applications
Product Overview
The C1815 is an NPN bipolar junction transistor designed for general-purpose applications. It features a power dissipation capability and is marked with 'HF'. This transistor is suitable for various electronic circuits requiring amplification or switching functions.
Product Attributes
- Type: NPN Transistor
- Marking: HF
- Package: SOT-23 (Plastic surface mounted package; 3 leads)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current - Continuous | IC | 150 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55-150 | ||
| Electrical Characteristics (Tamb=25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 60 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 50 | V |
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A |
| Collector cut-off current | ICEO | VCE=50V, IB=0 | 0.1 | A |
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A |
| DC current gain | hFE | VCE=6V, IC=2mA | 200 - 400 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.25 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 1 | V |
| Transition frequency | fT | VCE=10V, IC=1mA, f=30MHz | 80 | MHz |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2410121222_CBI-C1815_C2828450.pdf
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