Electronic Dual PNP Transistor CBI EMT1 Featuring Independent Elements in SOT563 Package
Key Attributes
Model Number:
EMT1
Product Custom Attributes
Mfr. Part #:
EMT1
Package:
SOT-563
Product Description
Product Overview
The EMT1 is a dual PNP+PNP transistor housed in a SOT-563 package. Designed for automatic mounting with SOT-563 machines, this device features independent transistor elements to eliminate interference. It is suitable for various electronic applications requiring complementary PNP transistor functionality.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-563
- Transistor Type: DUAL TRANSISTOR (PNP+PNP)
- Internal Chip: Two 2SA1037AK chips
- Mounting: Suitable for automatic mounting machines
- Marking: T1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Collector-Base Voltage | VCBO | -60 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -6 | V | |||
| Collector Current | IC | -150 | mA | |||
| Collector Power Dissipation | PC | 150 | mW | |||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-50A, IE=0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-50A, IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB=-60V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-7V, IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=-6V, IC=-1mA | 120 | 560 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-50mA, IB=-5mA | -0.5 | V | ||
| Transition frequency | fT | VCE=-12V, IC=-2mA, f=100MHz | 140 | MHz | ||
| Output capacitance | Cob | VCB=-12V, IE=0, f=1MHz | 5 | pF | ||
2510101615_CBI-EMT1_C51315359.pdf
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