High conductance switching diode CBI BAS16TW ideal for various electronic circuit applications
Key Attributes
Model Number:
BAS16TW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16TW
Package:
SOT363
Product Description
Product Overview
This is a switching diode designed for general-purpose switching applications, featuring fast switching speed and high conductance. It is suitable for various electronic circuits requiring efficient signal processing.
Product Attributes
- Marking: MMBD4148TW:KA2, BAS16TW:KA2
- Package Type: SOT-363
- Material: Plastic-Encapsulate Diodes
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Molding Compound: Green (indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | @Ta=25 |
| Peak Repetitive Peak Reverse Voltage | VRRM | 75 | V | @Ta=25 |
| Working Peak Reverse Voltage | VRWM | 75 | V | @Ta=25 |
| DC Blocking Voltage | VR | 75 | V | @Ta=25 |
| RMS Reverse Voltage | VR(RMS) | 53 | V | @Ta=25 |
| Forward Continuous Current | IFM | 300 | mA | @Ta=25 |
| Average Rectified Output Current | IO | 150 | mA | @Ta=25 |
| Forward Surge Current @t=8.3ms | IFSM | 2.0 | A | @Ta=25 |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Junction to Ambient Thermal Resistance | RJA | 625 | /W | @Ta=25 |
| Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | @Ta=25 | |
| Electrical Ratings | ||||
| Reverse breakdown voltage | V (BR) | 75 | V | IR=10A |
| Forward voltage | VF1 | 0.715 | V | IF=1mA |
| Forward voltage | VF2 | 0.855 | V | IF=10mA |
| Forward voltage | VF3 | 1.0 | V | IF=50mA |
| Forward voltage | VF4 | 1.25 | V | IF=150mA |
| Reverse current | IR1 | 1 | A | VR=75V |
| Reverse current | IR2 | 25 | nA | VR=20V |
| Capacitance between terminals | CT | 2 | pF | VR=0V,f=1MHz |
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 |
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.90 | 1.00 | |
| A1 | 0.010 | 0.100 | |
| B | 1.20 | 1.40 | |
| bp | 0.25 | 0.45 | |
| C | 0.09 | 0.15 | |
| D | 2.00 | 2.20 | |
| E | 1.15 | 1.35 | |
| HE | 2.15 | 2.55 | |
| Lp | 0.25 | 0.46 | |
| 0 | 6 |
2410121717_CBI-BAS16TW_C5362113.pdf
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