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quality NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits factory
quality NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits factory

NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

Product Overview

This NPN transistor, the MMBT3906, is an epitaxial planar die construction device designed for general-purpose applications. It offers complementary functionality to PNP transistors and is recommended for various electronic circuits. The transistor is housed in a compact SOT-23 plastic surface-mounted package with 3 leads.

Product Attributes

  • Complementary Type: PNP Transistor MMBT3906
  • Construction: Epitaxial Planar Die
  • Marking: 1AM
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 60 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 40 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 6 V
Collector Current IC (Ta=25 unless otherwise noted) 200 mA
Total Device Dissipation PC (Ta=25 unless otherwise noted) 200 mW
Thermal Resistance Junction to Ambient RJA (Ta=25 unless otherwise noted) 625 /W
Junction Temperature TJ (Ta=25 unless otherwise noted) 150
Storage Temperature Tstg (Ta=25 unless otherwise noted) -55 +150
Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICEX VCE=30V, VBE(off)=3V 50 nA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=10mA 100 300
DC current gain hFE(2) VCE=1V, IC= 50mA 60
DC current gain hFE(3) VCE=1V, IC= 100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V
Transition frequency fT VCE=20V, IC=10mA, f=100MHz 300 MHz
Delay Time td VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Rise Time tr VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Storage Time ts VCC=3V, IC=10mA, IB1=-IB2=1mA 200 nS
Fall Time tf VCC=3V, IC=10mA, IB1=-IB2=1mA 50 nS

2410121523_CBI-MMBT3904_C2828445.pdf

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