PNP Epitaxial Planar Transistor CBI MMBTSA1015 Designed for Switching and Audio Frequency Amplifier
Key Attributes
Model Number:
MMBTSA1015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMBTSA1015
Package:
SOT-23
Product Description
Product Overview
This PNP Silicon Epitaxial Planar Transistor is designed for switching and AF amplifier applications. It is available in three DC current gain groups: O, Y, and G. The complementary NPN transistor MMBTSC1815 is recommended for NPN applications. The transistor is housed in a SOT-23 plastic package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | |||
| Collector Base Voltage | -VCBO | 50 | V |
| Collector Emitter Voltage | -VCEO | 50 | V |
| Emitter Base Voltage | -VEBO | 5 | V |
| Collector Current | -IC | 150 | mA |
| Base Current | -IB | 50 | mA |
| Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature Range | TS | -65 to +150 | °C |
| Characteristics at Ta = 25 °C | |||
| DC Current Gain at -VCE = 6 V, -IC = 2 mA | hFE (Group O) | 70 - 120 | - |
| hFE (Group Y) | 120 - 200 | - | |
| hFE (Group G) | 200 - 400 | - | |
| DC Current Gain at -VCE = 6 V, -IC = 150 mA | hFE | 25 - 140 | - |
| Collector Base Cutoff Current at -VCB = 50 V | -ICBO | - 0.1 | µA |
| Emitter Base Cutoff Current at -VEB = 5 V | -IEBO | - 0.1 | µA |
| Collector Base Breakdown Voltage at -IC =100 µA | -V(BR)CBO | 50 | V |
| Collector Emitter Breakdown Voltage at -IC = 10 mA | -V(BR)CEO | 50 | V |
| Emitter Base Breakdown Voltage at -IE = 10 µA | -V(BR)EBO | 5 | V |
| Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA | -VCE(sat) | - 0.3 | V |
| Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA | -VBE(sat) | - 1.1 | V |
| Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA | fT | 80 | MHz |
| Output Capacitance at -VCB = 10 V, f = 1 MHz | COB | - 7 | pF |
Package Outline
Plastic surface mounted package; 3 leads SOT-23
2409291504_CBI-MMBTSA1015_C21714184.pdf
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