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quality Transistor CBI BC846C NPN Silicon Epitaxial Type in Compact SOT23 Package for Switching Applications factory
quality Transistor CBI BC846C NPN Silicon Epitaxial Type in Compact SOT23 Package for Switching Applications factory

Transistor CBI BC846C NPN Silicon Epitaxial Type in Compact SOT23 Package for Switching Applications

Key Attributes
Model Number: BC846C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC846C
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. For complementary types, the PNP transistors BC856...BC860 are recommended. The device is housed in a SOT-23 Plastic Package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon Epitaxial Transistor

Technical Specifications

Parameter Symbol BC846 BC847, BC850 BC848, BC849 Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 6 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature TJ 150 C
Storage Temperature Range TS -65 to +150 C
Characteristics at Tamb = 25 C
DC Current Gain (VCE = 5 V, IC = 2 mA) hFE 110 - 220 200 - 450 420 - 800 -
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCEsat 250 mV
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5 mA) VCEsat 600 mV
Base Emitter On Voltage (IC = 2 mA, VCE = 5 V) VBE(on) 580 - 700 mV
Base Emitter On Voltage (IC = 10 mA, VCE = 5 V) VBE(on) 720 mV
Collector Cutoff Current (VCB = 30 V) ICBO 15 nA
Current Gain Bandwidth Product (VCE = 5 V, IC = 10 mA, f = 100 MHz) fT 300 MHz
Output Capacitance (VCB = 10 V, f = 1 MHz) Cob 6 pF
Input Capacitance (VEB = 0.5 V, f = 1 MHz) Cib 9 pF
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz) NF BC846, BC847, BC848: 10 dB - - -
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz) NF - BC849, BC850: 4 dB - -
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz) NF - - BC849: 4 dB -
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz) NF - - BC850: 3 dB -
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121447_CBI-BC846C_C21714250.pdf

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