NPN Plastic Encapsulated Transistor CBI S9018W for AM FM Amplifier and Local Oscillator Applications

Key Attributes
Model Number: S9018W
Product Custom Attributes
Mfr. Part #:
S9018W
Package:
SOT-323
Product Description

Product Overview

This NPN plastic-encapsulated transistor is designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers a high current gain and a typical transition frequency (fT) of 1.1 GHz. The device is marked with 'J8'.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Transistor (NPN)
  • Encapsulation: Plastic

Technical Specifications

Symbol Parameter Test Conditions Value Units
Maximum Ratings (TA=25 unless otherwise noted)
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current - Continuous 50 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC= 100A, IE=0 30 V
V(BR)CEO Collector-emitter breakdown voltage IC= 1mA, IB=0 15 V
V(BR)EBO Emitter-base breakdown voltage IE=100A, IC=0 5 V
ICBO Collector cut-off current VCB=12V, IE=0 0.05 A
ICEO Collector cut-off current VCE=12V, IB=0 0.1 A
IEBO Emitter cut-off current VEB= 3V, IC=0 0.1 A
hFE(1) DC current gain VCE=5V, IC= 1mA 105-195
VCE(sat) Collector-emitter saturation voltage IC=10mA, IB= 1mA 0.5 V
VBE(sat) Base-emitter saturation voltage IC=10mA, IB= 1mA 1.4 V
fT Transition frequency VCE=5V, IC= 5mA, f=400MHz 600 MHz

2509181520_CBI-S9018W_C51814156.pdf

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