NPN Transistor CBI 2SC2873U High Speed Switching and Power Amplification with Low Saturation Voltage
Product Overview
This NPN transistor is designed for high-speed switching applications and power amplification. It features a small flat package, a low collector-emitter saturation voltage, and a complementary type to the 2SA1213. Ideal for use in power amplifier and switching circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-89
- Encapsulation: Plastic
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=2V, IC=0.5A | 70 | 240 | ||
| DC current gain | hFE(2) | VCE=2V, IC=2A | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A,IB=50mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A,IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=2V,IC=0.5A | 120 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 30 | pF |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage | 50 | V |
| VCEO | Collector-Emitter Voltage | 50 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current | 2 | A |
| PC | Collector Power Dissipation | 500 | mW |
| RJA | Thermal Resistance From Junction To Ambient | 250 | /W |
| Tj | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55~+150 |
hFE Classification
| RANK | RANGE | MARKING |
|---|---|---|
| O | 70140 | MO |
| Y | 120240 | MY |
2410121550_CBI-2SC2873U_C5362139.pdf
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