Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification
Key Attributes
Model Number:
2SC4177
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
150mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC4177
Package:
SOT-323
Product Description
Product Overview
This NPN transistor is designed for general-purpose amplification and offers high DC current gain. It is complementary to the 2SA1611 and is suitable for high voltage applications. Key features include high voltage ratings and a wide DC current gain range, with specific hFE ranks available for tailored performance.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: Plastic-Encapsulated Transistors
- Complementary to: 2SA1611
- Marking: L4, L5, L6, L7
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 100 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 150 | mW | ||
| Thermal Resistance From Junction To Ambient | RJA | 833 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE* | VCE=6V, IC=1mA | 90 | 600 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 1 | V | ||
| Base-emitter voltage | VBE | VCE=6V, IC=1mA | 0.55 | 0.65 | V | |
| Transition frequency | fT | VCE=6V, IC=10mA | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=6V, IE=0, f=1MHz | 3 | pF |
hFE Rank Classification
| Rank | Range |
|---|---|
| L4 | 90180 |
| L5 | 135270 |
| L6 | 200400 |
| L7 | 300600 |
Package Information
| Package Type | Pinout |
|---|---|
| SOT-323 | 1. BASE, 2. EMITTER, 3. COLLECTOR |
2409291504_CBI-2SC4177_C21714264.pdf
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