Plastic Encapsulated Dual Transistor Package Featuring CBI BC846PN NPN and PNP Transistors in SOT363
Key Attributes
Model Number:
BC846PN
Product Custom Attributes
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC846PN
Package:
SOT-363
Product Description
Product Overview
This product is a plastic-encapsulated dual transistor package containing isolated NPN and PNP transistors. It is designed for electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is supplied in a SOT-363 package.
Product Attributes
- Brand: CJ-elec (implied by website reference)
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Model Designation: BC846PN/TR1 (NPN+PNP Dual Transistor)
Technical Specifications
General Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 80 | V |
| Collector-Emitter Voltage | VCEO | 65 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current Continuous | IC | 0.1 | A |
| Collector Power Dissipation | PC | 200 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55-150 |
NPN Transistor (TR1) Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=10A, IE=0 | 80 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 65 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=1A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICBO | VCB=30V, IE=0 | 15 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=5V, IC=0 | 15 | nA | ||
| DC Current Gain | hFE | VCE=5V, IC=2mA | 200 | 450 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10mA, IB=0.5mA | 0.25 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100mA, IB=5mA | 0.6 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=10mA, IB=0.5mA | 0.7 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100mA, IB=5mA | 0.9 | V | ||
| Base-Emitter Voltage | VBE(on) | VCE=5V, IC=2mA | 0.58 | 0.7 | V | |
| Base-Emitter Voltage | VBE(on) | VCE=5V, IC=10mA | 0.72 | V | ||
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6.0 | pF | ||
| Transition Frequency | fT | VCE=5V, IC=10mA, f=100MHz | 100 | MHz | ||
| Noise Figure | NF | VCE=5V, Ic=0.2mA, f=1kHz, Rg=2K, f=200Hz | 10 | dB |
PNP Transistor (TR2) Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-10A, IE=0 | -80 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-10mA, IB=0 | -65 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-1A, IC=0 | -5 | V | ||
| Collector Cut-off Current | ICBO | VCB=-30V, IE=0 | -15 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -15 | nA | ||
| DC Current Gain | hFE1 | VCE=-5V, IC=-2mA | 220 | 475 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-10mA, IB=-0.5mA | -0.3 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-100mA, IB=-5mA | -0.65 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-10mA, IB=-0.5mA | -0.7 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-100mA, IB=-5mA | -0.95 | V | ||
| Base-Emitter Voltage | VBE(on) | VCE=-5V, IC=-2mA | -0.6 | -0.75 | V | |
| Base-Emitter Voltage | VBE(on) | VCE=-5V, IC=-10mA | -0.82 | V | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 4.5 | pF | ||
| Transition Frequency | fT | VCE=-5V, IC=-10mA, f=100MHz | 100 | MHz | ||
| Noise Figure | NF | VCE=-5V, Ic=-0.2mA, f=1kHz, Rg=2K, f=200Hz | 10 | dB |
PNP Transistor (TR2) General Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -80 | V |
| Collector-Emitter Voltage | VCEO | -65 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current Continuous | IC | -0.1 | A |
| Collector Power Dissipation | PC* | 200 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55-150 |
2410121502_CBI-BC846PN_C2919795.pdf
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