SOT23 Plastic Package PNP Transistor CBI BC857B Ideal for Switching and Amplifier Electronic Designs
Key Attributes
Model Number:
BC857B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC857B
Package:
SOT-23
Product Description
Product Overview
The BC856BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package, offering a compact solution for various electronic designs.
Product Attributes
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | BC856 | BC857, BC860 | BC858, BC859 | Unit | |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 ℃) | ||||||
| Collector Base Voltage | -VCBO | 80 | 50 | 30 | V | |
| Collector Emitter Voltage | -VCEO | 65 | 45 | 30 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |||
| Collector Current | -IC | 100 | mA | |||
| Peak Collector Current | -ICM | 200 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | ℃ | |||
| Storage Temperature Range | Tstg | -65 to +150 | ℃ | |||
| Characteristics (at Ta = 25 ℃) | ||||||
| DC Current Gain at -VCE = 5 V, -IC = 2 mA (Group A) | hFE | 110-220 | - | - | - | |
| DC Current Gain at -VCE = 5 V, -IC = 2 mA (Group B) | hFE | 110-220 | 200-450 | - | - | |
| DC Current Gain at -VCE = 5 V, -IC = 2 mA (Group C) | hFE | 110-220 | 420-800 | - | - | |
| Collector Base Cutoff Current at -VCB = 30 V | -ICBO | - | 15 | nA | ||
| Collector Base Breakdown Voltage at -IC = 10 A | -V(BR)CBO | 80 | 50 | 30 | V | |
| Collector Emitter Breakdown Voltage at -IC = 10 A | -V(BR)CES | 80 | 50 | 30 | V | |
| Collector Emitter Breakdown Voltage at -IC = 10 mA | -V(BR)CEO | 65 | 45 | 30 | V | |
| Emitter Base Breakdown Voltage at -IE = 1 A | -V(BR)EBO | 5 | V | |||
| Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA | -VCE(sat) | - | 0.3 | V | ||
| Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA | -VCE(sat) | - | 0.65 | V | ||
| Base Emitter On Voltage at -IC = 2 mA, -VCE = 5 V | -VBE(on) | 0.6 - | V | |||
| Base Emitter On Voltage at -IC = 10 mA, -VCE = 5 V | -VBE(on) | 0.75 - 0.82 | V | |||
| Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz | fT | 100 | MHz | |||
| Output Capacitance at -VCB = 10 V, f = 1 MHz | Cob | - | 6 | pF | ||
| Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz (BC856, BC857, BC858) | NF | - | - | - | 10 dB | |
| Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz (BC859, BC860) | NF | - | - | - | 4 dB | |
| Noise Figure at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz (BC859) | NF | - | - | - | 2 dB | |
2410121238_CBI-BC857B_C2919767.pdf
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