PNP Transistor CBI SS8550W Featuring Maximum Collector Current 1.5A and Collector Emitter Voltage 25V

Name: PNP Transistor CBI SS8550W Featuring Maximum Collector Current 1.5A and Collector Emitter Voltage 25V
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SS8550W
Availability: InStock

Key Attributes

Model Number: SS8550W

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

200mW

Transition Frequency(fT):

100MHz

Type:

PNP

Current - Collector(Ic):

1.5A

Collector - Emitter Voltage VCEO:

25V

Operating Temperature:

Mfr. Part #:

SS8550W

Package:

SOT-323

Product Description

Product Overview

This PNP transistor is a complementary component to the SS8050W, designed for various electronic applications. It offers a maximum collector current of -1.5 A and a collector power dissipation of 0.2 W. The device is suitable for operation within a junction temperature of 150 .

Product Attributes

Type: PNP Transistor
Marking: Y2
Complementary to: SS8050W

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Collector-Base Voltage	VCBO	(TA=25 unless otherwise noted)		-40	V
Collector-Emitter Voltage	VCEO	(TA=25 unless otherwise noted)		-25	V
Emitter-Base Voltage	VEBO	(TA=25 unless otherwise noted)		-5	V
Collector Current - Continuous	IC	(TA=25 unless otherwise noted)		-1.5	A
Collector Power Dissipation	PC	(TA=25 unless otherwise noted)		0.2	W
Junction Temperature	Tj	(TA=25 unless otherwise noted)		150
Storage Temperature	Tstg	(TA=25 unless otherwise noted)	-55	150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-40V, IE=0		-0.1	A
Collector cut-off current	ICEO	VCE=-20V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	120	400
DC current gain	hFE(2)	VCE=-1V, IC=-800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB=-80mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB=-80mA		-1.2	V
Base-emitter on voltage	VBE(on)	IC=-1V, VCE=-10mA		-1	V
Base-emitter positive favor voltage	VBEF	IB=-1A		-1.55	V
Transition frequency	fT	VCE= -10V, IC= -50mA, f=30MHz	100		MHz
Output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		20	pF

Package Information

Package Type	Pin Configuration
SOT323	1. BASE, 2. EMITTER, 3. COLLECTOR

hFE Classification

RANK	RANGE
L	120200
H	200350
J	300400

Package Outline Dimensions (SOT-323)

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.100	0.035 - 0.043
A1	0.000 - 0.100	0.000 - 0.004
A2	0.900 - 1.000	0.035 - 0.039
b	0.200 - 0.400	0.008 - 0.016
c	0.080 - 0.150	0.003 - 0.006
D	2.000 - 2.200	0.079 - 0.087
E	1.150 - 1.350	0.045 - 0.053
E1	2.150 - 2.450	0.085 - 0.096
e
e1	1.200 - 1.400	0.047 - 0.055
L
L1	0.260 - 0.460	0.010 - 0.018
	0 - 8	0 - 8
REF.	0.525	0.021
TYP.	0.650	0.026

2410121317_CBI-SS8550W_C2836074.pdf

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