MMUN5233DW Dual Bias Resistor Transistor NPN Silicon Surface Mount Device with Integrated Resistors

Key Attributes
Model Number: MMUN5233DW
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5233DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. This series is designed for low power surface mount applications where board space is limited, offering advantages such as reduced board space and component count. The MMUN5211DW series houses two BRT devices in a SOT-363 package. The material of the product complies with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-363
  • Material Compliance: RoHS

Technical Specifications

Model Marking R1 (K) R2 (K) Shipping DC Current Gain (hFE) Min. IEBO Max. (mA) VCEsat Max. (V) VOL Max. (V) VOH Min. (V)
MMUN5211DW 7A 10 10 3000/Tape&Reel 35 0.5 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5212DW 7B 22 22 3000/Tape&Reel 60 0.2 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5213DW 7C 47 47 3000/Tape&Reel 80 0.1 - 0.2 (VCC=5V, VB=3.5V, RL=1K) -
MMUN5214DW 7D 10 47 3000/Tape&Reel 80 0.2 - 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5215DW 7E 10 3000/Tape&Reel 160 0.9 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5216DW 7F 4.7 3000/Tape&Reel 160 1.9 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5230DW 7G 1 1 3000/Tape&Reel 3 4.3 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5231DW 7H 2.2 2.2 3000/Tape&Reel 8 2.3 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5232DW 7J 4.7 4.7 3000/Tape&Reel 15 1.5 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5233DW 7K 4.7 47 3000/Tape&Reel 80 0.18 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5234DW 7L 22 47 3000/Tape&Reel 80 0.13 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5235DW 7M 2.2 47 3000/Tape&Reel 80 0.2 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5238DW 7Q 2.2 - 3000/Tape&Reel 160 4 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5241DW 7T 100 - 3000/Tape&Reel 160 0.1 - 0.2 (VCC=5V, VB=5V, RL=1K) -
Maximum Ratings
Collector-Base Voltage (VCBO) 50 Vdc
Collector-Emitter Voltage (VCEO) 50 Vdc
Collector Current (IC) 100 mAdc
Thermal Characteristics
Total Device Dissipation (PD) (One Junction Heated) 187 mW (Note 1) @ TA=25C
Derate above 25C (One Junction Heated) 1.5 mW/C (Note 1)
Junction-to-Ambient Thermal Resistance (RJA) (One Junction Heated) 670 C/W (Note 1)
Total Device Dissipation (PD) (Both Junctions Heated) 250 mW (Note 1) @ TA=25C
Derate above 25C (Both Junctions Heated) 2.0 mW/C (Note 1)
Junction-to-Ambient Thermal Resistance (RJA) (Both Junctions Heated) 493 C/W (Note 1)
Junction-to-Lead Thermal Resistance (RJL) (Both Junctions Heated) 188 C/W (Note 1)
Junction and Storage Temperature (TJ, Tstg) 55 to +150 C
Notes: 1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 x 1.0 inch Pad

2410121707_CBI-MMUN5233DW_C21714286.pdf

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